热丝CVD法生长纳米金刚石膜及其生长机理研究

发布时间：2018-03-21 21:13

本文选题：热丝化学气相沉积　切入点：纳米金刚石膜　出处：《武汉工程大学》2015年硕士论文　论文类型：学位论文

【摘要】：纳米金刚石膜不仅具有与常规微米金刚石膜接近或相同的性能,而且具有晶粒尺寸小、表面光洁度高、摩擦系数小、更好的场发射性能以及易于研磨抛光的优点,因而能弥补微米金刚石膜的不足,拓展金刚石膜的应用领域。而目前纳米金刚石膜的生长速率和生长质量都还有待提高,因此,研究高生长速率和高生长质量纳米金刚石膜的制备具有很重要的意义。为了制备纳米金刚石膜,主要研究了利用热丝CVD法在H2/CH3COCH3体系和在Ar/H2/CH3COCH3体系中的生长工艺,并对热丝化学气相沉积金刚石膜进行了发射光谱诊断,分析研究其生长机理。在H2/CH3COCH3体系制备纳米金刚石膜的实验中,主要研究了碳源浓度及衬底温度对制备纳米金刚石膜的影响。在Ar/H2/CH3COCH3体系制备纳米金刚石膜的实验中,则主要研究了Ar浓度、反应气压、碳源浓度及衬底温度对制备纳米金刚石膜的影响。在Ar/H2/CH3COCH3生长体系中,纳米金刚石膜的生长速率和生长质量均高于H2/CH3COCH3生长体系,这是因为Ar的引入有效地提高了体系中的等离子浓度,增加了二次形核率,有利于细化晶粒尺寸,加快生长速率。此外,对热丝化学气相沉积金刚石膜进行了发射光谱诊断,在Ar/H2/CH3COCH3生长体系中,CH、C2浓度比Ar/H2/CH4生长体系更高,且出现有利于刻蚀石墨相的含氧基团,Ar所获得的激发能量更高,谱线波长短,且在3.5 kPa反应气压下CH基团的浓度最大。
[Abstract]:Nanocrystalline diamond films not only have the same or similar properties as conventional micron diamond films, but also have the advantages of small grain size, high surface finish, small friction coefficient, better field emission performance and easy to grind and polishing. Therefore, it can make up for the shortage of micron diamond film and expand the application field of diamond film. However, the growth rate and quality of nanocrystalline diamond film need to be improved at present. It is of great significance to study the preparation of nanocrystalline diamond films with high growth rate and high growth quality. In order to prepare nanocrystalline diamond films, the growth process of nanocrystalline diamond films using hot-filament CVD method in H2/CH3COCH3 system and Ar/H2/CH3COCH3 system was studied. The emission spectrum of hot-filament chemical vapor deposition diamond film was analyzed and its growth mechanism was studied. In the experiment of preparing nano-diamond film with H2/CH3COCH3 system, The effects of carbon source concentration and substrate temperature on the preparation of nanocrystalline diamond films were studied. In the experiment of preparing nanocrystalline diamond films in Ar/H2/CH3COCH3 system, the concentration of ar and reaction pressure were studied. The effects of carbon source concentration and substrate temperature on the preparation of nanocrystalline diamond films were investigated. The growth rate and quality of nanocrystalline diamond films in Ar/H2/CH3COCH3 system were higher than those in H2/CH3COCH3 system. This is because the introduction of ar can effectively increase the plasma concentration in the system, increase the secondary nucleation rate, refine the grain size and accelerate the growth rate. In addition, the emission spectrum diagnosis of the hot filament chemical vapor deposition diamond film is carried out. In Ar/H2/CH3COCH3 growth system, the concentration of CHC _ 2 is higher than that of Ar/H2/CH4, and the excitation energy is higher, the wavelength of spectrum is shorter, and the concentration of Ch group is the largest at 3.5 kPa reaction pressure.
【学位授予单位】：武汉工程大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ163;TB383.2

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