半导体硼柱形微靶电火花加工技术

发布时间：2018-03-31 09:55

本文选题：惯性约束聚变　切入点：硼靶　出处：《原子能科学技术》2017年10期

【摘要】：在惯性约束聚变研究中,硼的柱形微靶可作为黑腔填充材料。本文通过电火花铣削加工技术,采用含碳较高的电介质,利用导电性能较好的钨钢作电极材料,实现了半导体硼柱形微靶加工。通过奥林巴斯测量显微镜对硼柱直径进行了测量,测量结果表明,硼柱的直径加工精度可控制在小于±10μm。采用扫描电镜对形貌进行了分析,结果表明,加工前后硼的表面形貌未改变。通过能谱分析了硼柱表面的导电层成分及通过X射线能谱(XPS)分析了碳元素价态,结果表明,电火花铣削加工过程中,由于电介质分解生成游离态的碳及电极材料熔融后沉积在硼表面,形成辅助导电层,通过对辅助导电层加工,产生的瞬时高温使硼熔融气化,从而实现对半导体硼的加工。
[Abstract]:In inertial confinement fusion, boron columnar targets can be used as black cavity filling materials.In this paper, semiconductor boron columnar microtarget machining is realized by means of EDM technology, using dielectric with high carbon content and tungsten steel with good conductivity as electrode material.The diameter of boron column was measured by Olympus measuring microscope. The results show that the machining accuracy of boron column is less than 卤10 渭 m.The morphology of boron was analyzed by scanning electron microscope. The results showed that the surface morphology of boron remained unchanged before and after processing.The composition of conducting layer on the surface of boron column was analyzed by energy spectrum, and the valence state of carbon element was analyzed by X-ray energy dispersive spectroscopy (XPS). The results show that, in the process of EDM,Due to the decomposition of dielectric and the deposition of free carbon and electrode materials on the surface of boron after melting, the auxiliary conductive layer is formed. By processing the auxiliary conductive layer, the boron is melted and vaporized by the instantaneous high temperature, thus the processing of semiconductor boron is realized.
【作者单位】：中国工程物理研究院激光聚变研究中心;
【基金】：中国工程物理研究院超精密加工重点实验室基金资助项目(ZZ2012002) 科学挑战计划专题资助项目(0006)
【分类号】：TQ128.1

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