MPCVD制备大面积超纳米金刚石膜的研究

发布时间：2018-04-05 04:28

本文选题：微波等离子体　切入点：化学气相沉积　出处：《武汉工程大学》2015年硕士论文

【摘要】：超纳米金刚石作为纳米金刚石领域一个极其重要的分支,在硬度,表面光滑度,摩擦系数,断裂韧性,电学性能,铸形兼容性等方面更加显著,可在机械涂层,场发射及电化学,微机电系统(MEMS),生物医学,声学,光学等领域发挥重要作用。国外学者经过十多年的研究和努力,在超纳米金刚石的制备和性能研究方面取得了极大的进步和发展。相比之下,国内相关研究尚属起步,极其缺乏超纳米金刚石膜制备工艺方面的系统研究。本文利用自制10kW-MPCVD装置,以CH_4/Ar/H2为气源制备了超纳米金刚石膜,同时也利用韩国Woosinent-R2.0型MPCVD装置,以CH_4/N_2和CH_4/N_2/H2为气源生长了掺氮超纳米金刚石膜,详细论述了工艺参数对生长不同超纳米金刚石膜的影响,并成功的沉积出直径为50mm的大面积掺氮超纳米金刚石膜。实验研究结果表明:1、在利用CH_4/Ar作为气源生长超纳米金刚石时,为保证等离子体的稳定性和活性基团能量和密度,必须添加少量的氢气和采用较低的功率和高气压(10kPa)条件下进行。2、当在Ar/CH_4环境中添加少量氢气生长超纳米金刚石时,随着氢气浓度的减小,薄膜的晶粒尺寸减小,薄膜中金刚石相含量降低,非晶碳和石墨含量增大,薄膜趋向(111)面优先生长。3、当利用CH_4/N_2作为气源生长掺氮超纳米金刚石膜时,随着CH_4/N_2气源浓度比的减小薄膜表面的团聚体外形“针状”逐渐演变为颗粒状,薄膜晶粒尺寸增大,薄膜的致密度和质量提高,而导电性变差。4、当在CH_4/N_2环境中添加少量氢气生长掺氮超纳米金刚石时,随着氢气浓度的增大,薄膜的晶粒尺寸增大,杂质和缺陷及生长速率降低,由G峰漂移引起的压应力也随之减小,薄膜的质量提高但导电性变差。
[Abstract]:As a very important branch of nanocrystalline diamond field, ultrananocrystalline diamond is more prominent in hardness, surface smoothness, friction coefficient, fracture toughness, electrical properties, cast compatibility and so on.Field emission and electrochemistry, MEMS, MEMS, biomedicine, acoustics, optics and other fields play an important role.After more than ten years of research and efforts, foreign scholars have made great progress in the preparation and properties of ultrananocrystalline diamond.In contrast, the domestic related research is still at the beginning, and the systematic research on the preparation process of ultra-nano diamond films is extremely lacking.In this paper, ultrananocrystalline diamond films were prepared by using self-made 10kW-MPCVD apparatus and CH_4/Ar/H2 as gas source. At the same time, nitrogen-doped ultrananocrystalline diamond films were grown using CH_4/N_2 and CH_4/N_2/H2 as gas source in Korea Woosinent-R2.0 type MPCVD device.The effects of process parameters on the growth of different ultrananocrystalline diamond films were discussed in detail, and a large area of nitrogen-doped nanocrystalline diamond films with diameter of 50mm were successfully deposited.The experimental results show that in order to ensure the stability of the plasma and the energy and density of the active group, the nanocrystalline diamond is grown by using CH_4/Ar as the gas source.It is necessary to add a small amount of hydrogen and use low power and high pressure of 10 KPA. When adding a small amount of hydrogen to the Ar/CH_4 environment to grow ultrananocrystalline diamond, the grain size of the film decreases with the decrease of hydrogen concentration.The content of diamond phase in the film decreased, the content of amorphous carbon and graphite increased, and the film tended to have preferential growth on the surface of 111). When CH_4/N_2 was used as the gas source to grow the nitrogen-doped ultrananocrystalline diamond film,With the decrease of the concentration ratio of CH_4/N_2 gas source, the aggregate shape on the surface of the film becomes granular, the grain size of the film increases, and the density and quality of the film increase.However, with the increase of hydrogen concentration, the grain size of the film increases, and the impurity, defect and growth rate decrease with the increase of hydrogen concentration.The compressive stress caused by G peak drift also decreases, and the quality of the film is improved, but the conductivity becomes worse.
【学位授予单位】：武汉工程大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ163

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