毫米尺寸石墨烯单晶及器件研究

发布时间：2018-04-09 08:18

本文选题：化学气相沉积　切入点：石墨烯　出处：《南昌大学》2015年硕士论文

【摘要】：化学气相沉积法是制备高品质石墨烯的有效方式。本文提出一种简单且重复性好的制备石墨烯的回流化学气相沉积方法。这种方法能够显著抑制铜箔上石墨烯单晶的成核密度。将铜箔放在一端封闭的内管中,铜箔上石墨烯单晶的成核密度可以减少超过5个数量级,从而达到超低的成核密度(10核/cm2),保证大尺寸单晶的生长。实验结果表明,在优化的生长条件下,该方法可制备出横向尺寸达到1.9毫米的单晶单层石墨烯。基于分子束外延技术,将三氧化钼(MoO3)薄膜沉积到所制备的单晶石墨烯表面,可实现对石墨烯的有效掺杂。原位场效应晶体管特性测量结果显示,三氧化钼的沉积可对石墨烯进行p型掺杂。掺杂后的石墨烯在保持原有的电子和空穴高迁移率特性的同时,其电导率被显著提高。当MoO3涂层的厚度为10 nm时,石墨烯的电导率可以增加7倍,为石墨烯在电子器件和透明、导电、柔性电极等方面的应用提供了基础。
[Abstract]:Chemical vapor deposition is an effective way to prepare high quality graphene.In this paper, a simple and reproducible method for preparing graphene by reflux chemical vapor deposition is proposed.This method can significantly inhibit the nucleation density of graphene single crystals on copper foil.When copper foil is placed in a closed inner tube, the nucleation density of graphene single crystal on copper foil can be reduced by more than 5 orders of magnitude, which can reach an ultra-low nucleation density of 10 nuclei / cm ~ (2) and guarantee the growth of large size single crystal.The experimental results show that under the optimized growth conditions, the monolayer graphene with a transverse size of 1.9 mm can be prepared by this method.Based on the molecular beam epitaxy (MBE) technique, the molybdenum trioxide (Moo _ 3) thin films were deposited on the surface of the single crystal graphene, and the effective doping of graphene was achieved.In situ field effect transistors (FET) measurements show that the deposition of molybdenum trioxide can doping graphene with p type.The conductivity of the doped graphene was significantly improved while maintaining the original high mobility of electrons and holes.When the thickness of MoO3 coating is 10 nm, the conductivity of graphene can be increased by 7 times, which provides the basis for the application of graphene in electronic devices, transparent, conductive, flexible electrode and so on.
【学位授予单位】：南昌大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ127.11;TN386

【共引文献】