碘化亚铜（CuI）材料的制备及其光电性能的研究

发布时间：2018-04-11 01:11

本文选题：碘化亚铜 + 铜膜碘化法　；参考：《鲁东大学》2017年硕士论文

【摘要】：近年来,一些铜系化合物材料,如氧化铜(CuO)、氧化亚铜(Cu2O)、硫氰酸亚铜(CuSCN)、碘化亚铜(CuI),由于其优异的p型导电特性,在半导体光电器件领域表现出潜在的应用前景,引起了人们越来越多的关注。这些材料其晶体内部存在大量点缺陷而产生铜空位受主能级,从而表现出p型导电特性。其中,CuI作为一种直接宽带隙(Eg=3.1eV)半导体材料,具有较高的激子束缚能(62meV)和较小的空穴有效质量,同时可以获得较高的载流子浓度和空穴迁移率。此外,CuI还具有在可见光区透过率高、无毒、储量丰富、成本低廉的优点,成为短波长发光器件和光电探测器件领域新的研究热点。本文分别利用铜膜碘化法和低温溶液合成等方法制备了CuI薄膜及纳米结构材料,研究CuI的结晶质量和发光特性;并利用脉冲激光沉积技术(PLD)在CuI薄膜上外延生长了高质量的氧化锌(ZnO)薄膜,构造了p-CuI/n-ZnO异质结复合结构,研究了该异质结的光电特性。论文的主要结果为:1.利用铜膜碘化法分别在硅(100)衬底和石英衬底上制备了CuI薄膜。扫描电子显微镜(SEM)和X射线衍射谱(XRD)结果表明,CuI薄膜具有较高的结晶质量,沿(111)晶向择优生长;光致发光(PL)光谱测试发现,其发光峰包含410nm、420nm和700nm附近的三个发光峰。分别研究了Cu膜厚度和退火工艺对CuI薄膜的光致发光性能的影响机制,并解释了其发光机理。研究了室温下CuI薄膜的光学性质和电学性质,实验结果表明,CuI薄膜在可见光区域(400nm~760nm)透过率超过60%。2.利用低温溶液合成法在硅(100)衬底上制备了CuI纳米结构,研究了其结构特性和发光特性。并创新性的发展了一种利用水热反应制备CuI纳米结构的方法。XRD和SEM对样品形貌和结构分析表明,CuI纳米结构呈闪锌矿结构,择优生长晶面为(111);通过改变实验条件,CuI样品形貌表现出纳米片、纳米颗粒、纳米线和纳米团簇等结构;PL测试显示,其光致发光峰主要集中在410nm、420nm和700nm三个位置。3.利用脉冲激光沉积技术(PLD)在硅衬底上制备ZnO薄膜,通过优化制备参数,研究了生长条件对ZnO薄膜结构和发光特性的影响。在CuI薄膜上外延生长了高质量的氧化锌(ZnO)薄膜,构造了p-CuI/n-ZnO异质结复合结构,研究了CuI/ZnO薄膜复合层的光致发光特性和PN结整流特性。结果表明,复合层在可见光范围内表现出较宽的发光特性,在白光LED器件方面具有一定的应用前景;此外,异质结的电学特性测试结果表明,p-CuI/n-ZnO异质结具有一定的整流特性,在±2V时的整流比约为13.3,可应用于短波长紫外探测器件。
[Abstract]:In recent years, some copper-based compound materials, such as cupric oxide, Cu2OO, CuSCN thiocyanate and CuIN iodide, have shown potential applications in the field of semiconductor optoelectronic devices due to their excellent p-type conductivity.It has attracted more and more attention.There are a large number of defects in the crystal of these materials resulting in the formation of copper vacancy acceptor energy levels, thus showing a p-type conductivity.As a kind of direct wide band gap Egg 3.1eV) semiconductor material, Cui has higher exciton binding energy (62meV) and smaller hole effective mass, at the same time, higher carrier concentration and hole mobility can be obtained.In addition, Cui has the advantages of high transmittance in visible light region, non-toxic, abundant reserves and low cost, so it has become a new research hotspot in the field of short-wavelength light-emitting devices and photodetectors.In this paper, CuI films and nanostructured materials were prepared by copper film iodization and low temperature solution synthesis, respectively. The crystallization quality and luminescence characteristics of CuI were studied.High quality ZnO ZnO thin films were epitaxially grown on CuI thin films by pulsed laser deposition technique. The p-CuI/n-ZnO heterojunction composite structure was constructed. The photoelectric properties of the heterojunction were studied.The main result of this paper is 1: 1.CuI thin films were prepared on silicon (100) substrates and quartz substrates by copper film iodization method.The results of scanning electron microscopy (SEM) and X-ray diffraction (XRD) show that the thin films have high crystallization quality and grow in the preferred direction along the crystal direction of Cu 111, and the photoluminescence spectra show that the photoluminescence peaks consist of 410nm and 420nm and three peaks near 700nm.The effects of Cu film thickness and annealing process on the photoluminescence properties of CuI films were investigated, and the luminescence mechanism was explained.The optical and electrical properties of CuI thin films at room temperature have been studied. The experimental results show that the transmittance of the CuI thin films exceeds 60.2 in the visible region.CuI nanostructures were prepared on Si (100) substrates by low temperature solution synthesis. The structure and luminescence properties of CuI nanostructures were investigated.An innovative method for preparing CuI nanostructures by hydrothermal reaction was developed. The morphology and structure analysis of the samples by SEM showed that the nanocrystalline CuI nanostructures were sphalerite structures.The photoluminescence peaks of the preferred growth crystal plane are 410nm ~ 420nm and 700nm ~ (-3) by changing the experimental conditions. The photoluminescence peaks are mainly located at 410nm ~ (420 nm) and 700nm ~ (-3) by means of photoluminescence (PL) measurements of nanoscale, nanocrystalline, nanowires and nanoclusters, and the results show that the photoluminescence peaks are mainly at 410nm and 420nm, respectively.ZnO thin films were prepared on silicon substrates by pulsed laser deposition. The effects of growth conditions on the structure and luminescence characteristics of ZnO thin films were studied by optimizing the preparation parameters.High quality zinc oxide (ZnO) thin films were epitaxially grown on CuI thin films, and p-CuI/n-ZnO heterojunction composite structures were constructed. The photoluminescence characteristics and PN junction rectifying characteristics of CuI/ZnO thin films were studied.The results show that the composite layer exhibits wide luminescence characteristics in the visible range, and has a certain application prospect in white light LED devices, in addition, the electrical properties of the heterojunction show that the p-CuI / n-ZnO heterojunction has a certain rectifying property.The rectifier ratio is about 13.3 at 卤2V, which can be used in short wavelength UV detector.
【学位授予单位】：鲁东大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ131.21

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