BZT基电容介质材料的掺杂及液相包裹改性研究

发布时间：2018-04-16 05:04

本文选题：锆钛酸钡 + 掺杂　；参考：《华北理工大学》2016年硕士论文

【摘要】：锆钛酸钡(BZT)材料具有优良的介电、铁电性能,作为重要的铁电材料,常应用于各种元器件中。为了提高其介电性能及温度稳定性,常采用掺杂和包裹的方法对其改性,以期达到实际应用的需要。采用固相反应法,制备了Fe_2O_3及Gd2O_3、La_2O_3、Sm_2O_3掺杂的BaZr_(0.1)Ti_(0.9)O_3基陶瓷粉体。采用液相包裹法,在BZT基粉体表面包裹一层Al_2O_3、SiO_2。然后分析了试样的微观结构、介电性能等。研究结果表明:随着Fe_2O_3掺杂量的增加,试样的介电常数εr先增加后减小,在掺杂量y=1.00时有较大值,介电损耗tanδ整体上减小。随Gd2O_3掺杂量的增加,介电常数在掺杂量y=0.20和0.60时有较大值,介质损耗整体上表现出下降趋势。Fe_2O_3、Gd2O_3的掺杂都具有一定的移峰与展宽的作用。随着La_2O_3掺杂量的增加,室温下介电常数增加,介质损耗整体上表现出下降趋势。La_2O_3的掺杂对居里峰值有所提高,有较明显的移峰效果,但居里峰展宽效果不明显。复合掺杂时,介电常数随Sm_2O_3加入量的增加先增加后降低,介质损耗整体上表现出增加趋势。Sm_2O_3的掺杂具有一定的移峰与展宽的作用。随着A12O_3包裹量的增加,试样的体积密度ρV逐渐减小,介电常数降低,介电损耗增大。随着包裹量的增加,A、B工艺条件下,居里点均向低温方向移动,同时介电峰被压低展宽。随着SiO_2包裹量的增加,试样的体积密度ρV逐渐减小,介电常数降低,介电损耗增大。A、B两种工艺条件下,随着包裹量的增加,居里点向高温移动,B工艺条件下,包裹对压峰效果不明显。
[Abstract]:Barium zirconium titanate (BZT) has excellent dielectric and ferroelectric properties. As an important ferroelectric material, it is often used in various components.In order to improve its dielectric properties and temperature stability, it is often modified by doping and encapsulation, in order to meet the needs of practical application.BaZr_(0.1)Ti_(0.9)O_3 based ceramic powders doped with Fe_2O_3 and Gd _ 2O _ 3 were prepared by solid state reaction.The surface of BZT based powder was coated with Al _ 2O _ 2 _ S _ 3SiO _ 2 by liquid phase encapsulation method.Then the microstructure and dielectric properties of the samples were analyzed.The results show that the dielectric constant 蔚 r increases first and then decreases with the increase of Fe_2O_3 doping content, and the dielectric loss tan 未 decreases as a whole.With the increase of doping amount of Gd2O_3, the dielectric constant has a larger value when the doping amounts are 0.20 and 0.60, and the dielectric loss shows a downward trend as a whole. The doping of Fe _ 2O _ 3 / Gd _ 2O _ 3 has a certain effect of peak shifting and broadening.With the increase of La_2O_3 doping content, the dielectric constant increases at room temperature, and the dielectric loss shows a decreasing trend. The doping of La _ S _ 2O _ 3 increases the Curie peak value, and has obvious peak shifting effect, but the broadening effect of Curie peak is not obvious.The dielectric constant increases first and then decreases with the increase of Sm_2O_3 content, and the dielectric loss shows an increasing trend. The doping of Sm _ 2O _ 3 has a certain effect of peak shifting and broadening.With the increase of A12O_3 encapsulation, the bulk density 蟻 V decreases gradually, the dielectric constant decreases and the dielectric loss increases.With the increase of encapsulation, the Curie point moves to low temperature, and the dielectric peak is depressed and widened.With the increase of SiO_2 encapsulation, the bulk density 蟻 V of the sample decreases gradually, the dielectric constant decreases, the dielectric loss increases, and the Curie point moves to high temperature under the condition of increasing the encapsulation amount.The effect of package on peak pressure is not obvious.
【学位授予单位】：华北理工大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TQ174.1

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