添加剂对ZnO线性陶瓷电阻微观结构及电学性能的影响

发布时间：2018-04-22 04:08

本文选题：ZnO线性陶瓷电阻 + NiO　；参考：《陕西科技大学》2015年硕士论文

【摘要】：Zn O线性陶瓷电阻是在上世纪八十年代末在Zn O压敏电阻的基础上发展起来的一种新型的线性电阻材料。与传统的金属电阻以及含氧化物的碳系电阻相比,具有不易被氧化,使用温度较高,且体积小、重量轻等优点,满足了现代电力系统发展中对设备的小型化以及轻量化的要求。同时,它的电阻率的波动范围较小,具有较小的电阻温度系数以及能够吸收大量的能量密度等优点使得其在电路中并联使用时不易发生电流的击穿。但是就目前国内生产的Zn O线性陶瓷电阻的来说,其电阻率的重复性以及可靠性还不能满足产业化需求,因此还需要我们进一步加深Zn O线性陶瓷电阻基础理论以及性能稳定性的分析,从而改善其综合性能。本文主要以前人研究为基础,选取综合性能较好的Zn O-Al2O3-Mg O体系作为基础体系,添加Ni O,制备出新的四元体系,并对烧结工艺进行了改善,并详细探讨了不同稀土氧化物对Zn O线性陶瓷电阻的微观结构以及电学性能的影响,并尝试在综合性能较好的Zn O-Al2O3-Mg O基础体系中添加Fe2O3,研究Fe2O3对Zn O线性陶瓷电阻微观结构以及各个电学性能的影响,为产业化生产奠定基础。首先本文向综合性能较好的Zn O-Al2O3-Mg O基础体系中,加入Ni O,详细分析了Ni O的含量对Zn O线性陶瓷电阻的影响,确定了Ni O的最佳含量为15 mol%,得到新四元体系的最优配方:70 mol%Zn O-6 mol%Mg O-0.5mol%La2O3-7 mol%Al2O3-1.5 mol%Si O2-15 mol%Ni O。并对Zn O线性陶瓷电阻的制备工艺进行了改善,通过对烧结温度的探讨,确定了烧结温度的最优值为1320°C。研究发现,Ni O的添加能够降低Zn O线性陶瓷电阻的非线性系数,提高电阻温度系数,不同的烧结温度对Zn O线性陶瓷电阻的电学性能的影响也有很大的差异。当Ni O的最佳含量为15 mol%且烧结温度为1320°C时,所得的电阻率为204.8Ω·cm,非线性系数为1.18,电阻温度系数为1.34×10-4/°C,能量密度达到最大值为809 J/cm3。其次在新四元体系以及最佳烧结温度下,通过改变稀土氧化物的种类以及含量,研究了La2O3、Y2O3、Sm2O3三种稀土氧化物对Zn O线性陶瓷电阻的微观结构以及电学性能的影响。研究发现La2O3在Zn O线性电阻中影响要大于Y2O3、Sm2O3对Zn O线性陶瓷电阻的影响。添加有0.25 mol%的La2O3样品在1320°C下烧结时,展现出优越的电学性能,其中电阻率为253.5Ω·cm、电阻温度系数为1.7×10-4/°C,非线性系数最低为1.16,同时随着温度变化,电阻率的老化速度为-1.2%。工业化生产中,不可避免的接触含有铁的设备,因此本文还在综合性能较好的Zn O-Al2O3-Mg O基础体系中添加Fe2O3,研究了不同含量的Fe2O3对Zn O线性陶瓷电阻微观结构以及各个电学性能的影响。研究发现,Fe2O3能够很大程度地提高Zn O线性陶瓷电阻的电阻率以及降低非线性系数,但是对电阻温度系数的影响是不利的。当Fe2O3的添加量为0.5 mol%,其电阻率达到最大值为458.4Ω·cm,非线性系数达到最小值为1.18,电阻温度系数为-1.21×10-3/°C。
[Abstract]:Zn O linear ceramic resistance is a new type of linear resistance material developed on the basis of Zn O varistor at the end of the 80s of last century. Compared with the traditional metal resistance and the oxide containing carbon system resistance, it is not easy to be oxidized, with the advantages of high temperature, small volume, light weight and so on, which satisfy the modern power system hair. At the same time, the small size of the equipment and the light weight requirements. At the same time, its resistivity fluctuation range is small, the small resistance temperature coefficient and the ability to absorb a large amount of energy density make it difficult to break through the current when the circuit is used in parallel. But the current domestic production of Zn O linear ceramic resistance It is said that the repeatability and reliability of its resistivity can not meet the needs of industrialization, so we also need to further deepen the analysis of the Zn O linear ceramic resistance basic theory and performance stability, so as to improve its comprehensive performance. This paper, based on the previous human research, selects the Zn O-Al2O3-Mg O system with better comprehensive performance as the base. The foundation system, adding Ni O, prepared a new four element system, improved the sintering process, and discussed in detail the influence of different rare earth oxides on the microstructure and electrical properties of Zn O linear ceramic resistance, and tried to add Fe2O3 to the Zn O-Al2O3-Mg O base system with good comprehensive properties, and studied Fe2O3 to Zn O linear ceramic electricity. The influence of microstructure and electrical properties is laid on the basis of industrial production. First, in this paper, the effect of Ni O content on Zn O linear ceramic resistance is analyzed in detail in the Zn O-Al2O3-Mg O basic system with good comprehensive performance. The optimum content of Ni O is 15 mol%, and the optimal formula of the new four element system is obtained: 70 Mol%Zn O-6 mol%Mg O-0.5mol%La2O3-7 mol%Al2O3-1.5 mol%Si O2-15 mol%Ni O. and the preparation process of Zn O linear ceramic resistance are improved. By discussing the sintering temperature, the optimum value of the sintering temperature is determined to be 1320 degrees C.. The influence of temperature coefficient and different sintering temperature on the electrical properties of Zn O linear ceramic resistors is also very different. When the optimum content of Ni O is 15 mol% and the sintering temperature is 1320 C, the obtained resistivity is 204.8 Omega cm, the nonlinear coefficient is 1.18, the resistance temperature coefficient is 1.34 x 10-4/ / C, and the energy density reaches the maximum value of 809 J/cm3.. Secondly, the effects of three rare earth oxides of La2O3, Y2O3, Sm2O3 on the microstructure and electrical properties of Zn O linear ceramic resistors were studied by changing the types and content of rare earth oxides at the new ternary system and the optimum sintering temperature. The study found that La2O3 in the linear resistance of Zn O was greater than Y2O3, Sm2O3 to Zn O linear ceramics. The influence of resistance. When adding 0.25 mol% La2O3 samples under 1320 degree C, the electrical properties are superior, of which the resistivity is 253.5 Omega cm, the resistance temperature coefficient is 1.7 x 10-4/ C, the nonlinear coefficient is lowest 1.16. At the same time, the aging speed of resistivity is inevitable in the industrial production of -1.2%. with the change of temperature. With iron equipment, this paper also added Fe2O3 in the Zn O-Al2O3-Mg O base system with better comprehensive performance. The influence of Fe2O3 on the microstructure and electrical properties of Zn O linear ceramic resistance is studied. It is found that Fe2O3 can greatly improve the resistivity of Zn O linear ceramic resistance and reduce the nonlinearity. The coefficient, but the effect on the temperature coefficient of resistance is unfavorable. When the addition of Fe2O3 is 0.5 mol%, the maximum resistivity is 458.4 Omega cm, the nonlinear coefficient reaches the minimum value of 1.18 and the resistance temperature coefficient is -1.21 x 10-3/ C.

【学位授予单位】：陕西科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ174.1

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