氧化锌基纳米复合结构的制备及光电性能研究

发布时间：2018-05-06 16:35

本文选题：氧化锌 + 纳米复合结构　；参考：《哈尔滨工业大学》2017年硕士论文

【摘要】：氧化锌由于其禁带宽度为3.37 e V且为直接带隙半导体材料,使其成为紫外光电探测器的热门材料之一。通过制备氧化锌纳米复合结构可以进一步提高器件的光电性能,具有很高的研究价值和应用潜力。本文分别通过光沉积和连续离子层吸附和交换法制备了Ag/ZnO、ZnS/ZnO和Ag2S/ZnO纳米复合结构以提高光电性能,主要研究内容如下:(1)首先本文对高质量纳米氧化锌阵列的制备进行了研究,在ITO衬底上制备种子层后用水热法可以得到高质量氧化锌纳米阵列,研究了溶液浓度对形貌的影响,发现0.03 mol/L的条件较好。之后通过光沉积的方法成功制备了Ag/ZnO纳米复合结构,改变紫外光功率、硝酸银浓度及反应时间,研究不同条件对纳米复合结构的影响,发现可以通过改变实验参数控制纳米复合结构的形貌和成分并使吸收边红移。在此基础上制备MSM型光电探测器,研究纳米复合结构对光电性能的影响,在365 nm光源下进行测试,发现该复合结构能够提高光电性能,且银纳米颗粒存在最优含量。(2)之后通过连续离子层吸附和交换法成功制备ZnS/ZnO和Ag2S/ZnO纳米复合结构,改变反应时间、硝酸银浓度及反应循环次数,研究不同条件对纳米复合结构的影响,发现可以通过改变实验参数控制纳米复合结构的形貌和成分,其中ZnS/ZnO纳米复合结构不影响吸收边位置,而Ag2S/ZnO纳米复合结构可以使吸收边红移。(3)接下来在ZnS/ZnO和Ag2S/ZnO纳米复合结构的基础上制备MSM型光电探测器,研究不同条件对器件性能的影响,在365 nm光源下进行测试,发现复合结构能够提高光电性能。对器件进行光响应测试,器件的最大响应度为0.026 A/W,最大响应波长376 nm。
[Abstract]:Zinc oxide has become one of the most popular materials for UV photodetectors because its band gap is 3.37e V and it is a direct bandgap semiconductor material. The preparation of ZnO nanocomposite structure can further improve the photoelectric performance of the device, which has high research value and application potential. In order to improve the optoelectronic properties, Ag / ZnO / ZnS / ZnO and Ag2S/ZnO nanocomposites were prepared by photodeposition and continuous ion layer adsorption and exchange respectively. The main research contents are as follows: (1) in this paper, the preparation of high quality ZnO nanocrystalline ZnO arrays is studied. High quality ZnO nanoarrays can be obtained by hydrothermal method after preparation of seed layer on ITO substrate. The effect of solution concentration on morphology is studied. It is found that the condition of 0.03 mol/L is better. After that, the Ag/ZnO nanocomposites were successfully prepared by photodeposition. The effects of different conditions on the nanocomposites were studied by changing the UV light power, the concentration of silver nitrate and the reaction time. It is found that the morphology and composition of the nanocomposite structure can be controlled by changing the experimental parameters and the absorption edge can be redshift. On this basis, MSM photodetectors were prepared, and the effect of nanocomposite structure on the photoelectric properties was studied. The results of measurement under 365nm light source showed that the composite structure could improve the photoelectric performance. The composite structure of ZnS/ZnO and Ag2S/ZnO was prepared by continuous ion layer adsorption and exchange method. The reaction time, the concentration of silver nitrate and the times of reaction cycle were changed. The influence of different conditions on the nanocomposite structure was studied. It was found that the morphology and composition of the nanocomposite structure could be controlled by changing the experimental parameters, and the ZnS/ZnO nanocomposite structure had no effect on the absorption edge position. The Ag2S/ZnO nanocomposite structure can make the absorption edge red shift.) next, the MSM photodetectors are fabricated on the basis of the ZnS/ZnO and Ag2S/ZnO nanocomposite structures. The effects of different conditions on the performance of the devices are studied and tested at 365nm light source. It is found that the composite structure can improve the photoelectric performance. The maximum responsivity of the device is 0.026 A / W and the maximum response wavelength is 376 nm.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TB383.1;TQ132.41

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