石墨烯基光电器件的制备与性能研究

发布时间：2018-05-15 13:36

本文选题：石墨烯 + 异质结　；参考：《北京邮电大学》2017年硕士论文

【摘要】：自2010年诺贝尔物理学奖公布以来,石墨烯材料以其独特的二维蜂巢晶格结构特点受到了科学界的广泛关注。近年来,国家出台多项政策,鼓励支持石墨烯产业发展,石墨烯材料的相关课题研究不仅具有一定的理论高度更具有广泛的现实意义。由于石墨烯独特的物理化学性质,其在多个领域拥有广阔的应用前景,包括电子学、光学、磁学、催化、储能、传感器和生物医学等领域,而石墨烯相关器件的制备与性能优化则成为石墨烯材料产业化的关键技术所在。因此,本文重点研究石墨烯材料在光电探测器方面的应用,并与不同半导体薄膜材料构成异质结构,以改善器件的结构和性能出发,重点探究不同结构石墨烯基器件在紫外光照下的光电响应特性。本文论述了以石墨烯为主的二维材料的结构性质、制备方法及其主要应用领域;以Ga_2O_3为主的多种半导体薄膜材料的生长与表征;单双层石墨烯基光电探测器的结构设计、制备与性能优化;类石墨烯二维材料的拓展探究等。本文主要采用CVD法生长的铜基单层石墨烯,通过Fe~(3+)的腐蚀去除Cu基底得到独立的单层石墨烯,再转移到不同基片上,以Ga_2O_3/SiC异质结构为基础,石墨烯作为透明电极比Au/Ti电极有更好的光电响应性能,尤其在254 nm紫外光照下,石墨烯电极和Au/Ti电极器件光暗比分别为63.31和4.81,响应度分别为0.18A/W和7.14×10-4 A/W,以此为基础,本文进一步探究石墨烯与不同衬底形成异质结在紫外光照下的响应性能,包括石墨烯与SiC、GaAs;单双层石墨烯基太阳能电池响应特性探究等。
[Abstract]:Since the publication of the Nobel Prize in Physics in 2010, graphene materials have attracted wide attention from the scientific community for their unique two-dimensional honeycomb lattice structure. In recent years, the government has issued many policies to encourage the development of graphene industry. The research on graphene materials not only has a certain theoretical height but also has a wide range of practical significance. Because of its unique physical and chemical properties, graphene has broad application prospects in many fields, including electronics, optics, magnetism, catalysis, energy storage, sensors and biomedicine. The preparation and performance optimization of graphene related devices have become the key technology of graphene material industrialization. Therefore, the application of graphene materials in photodetectors is studied in this paper, and different semiconductor thin films are used to form heterostructures to improve the structure and performance of the devices. The photoelectric response of graphene based devices with different structures under ultraviolet light was investigated. In this paper, the structure properties, preparation methods and main application fields of graphene based two-dimensional materials, the growth and characterization of various semiconductor thin film materials, the structure design of single and bilayer graphene based photodetectors, the growth and characterization of various semiconductor thin film materials, and the structure design of single and double layer graphene based photodetectors are discussed. Preparation and performance optimization; study on the development of graphene-like two-dimensional materials. In this paper, the copper based monolayer graphene grown by CVD method is used to remove the Cu substrate by Fe~(3. The monolayer graphene is transferred to different substrates, which is based on the Ga_2O_3/SiC heterostructure. Graphene as a transparent electrode has better photoelectric response performance than Au/Ti electrode. Especially under 254nm ultraviolet light, the light-to-dark ratio of graphene electrode and Au/Ti electrode are 63.31 and 4.81, respectively, and the responsivity is 0.18A/W and 7.14 脳 10 ~ (-4) A / W, respectively. In this paper, the response properties of graphene heterojunction with different substrates under UV irradiation are further investigated, including graphene and SICP GaAs, single and double layer graphene based solar cells, and so on.
【学位授予单位】：北京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ127.11

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