化学气相沉积单层VIB族过渡金属硫化物的研究进展

发布时间：2018-05-19 20:00

本文选题：过渡金属硫化物 + 化学气相沉积　；参考：《人工晶体学报》2017年06期

【摘要】：2004年以来,石墨烯因其优异的光学、电学性质而被广泛地研究,但由于其零带隙的特性极大地限制了它的应用前景。单层的VIB族过渡金属硫化物(TMDs)拥有类似石墨烯的晶体结构及可控的能带结构,是一类理想的二维直接带隙半导体材料,不仅可用于探索如谷极化等一些基础和前沿的物理问题,也可以广泛应用于纳米器件、光电子学和光催化的研究。近年来,化学气相沉积(CVD)技术作为一种相较于传统化学合成或物理剥离更加有效的制备方法被引入此类材料的生长,能够合成出拥有大面积连续的、厚薄均匀和较高晶体质量的单层TMDs。基于此,重点介绍了利用CVD技术生长单层TMDs所取得的进展,讨论了各工艺条件(如反应温度、载流气体、衬底、前驱物与衬底之间的距离等)对单层TMDs的生长及性质的影响。最后,探讨了利用CVD技术实现调控单层TMDs的尺寸、覆盖度和层厚均匀性的途径和方法。
[Abstract]:Graphene has been widely studied for its excellent optical and electrical properties since 2004, but its application prospect is greatly limited by its zero-band gap. The monolayer VIB family transition metal sulfides have graphene like crystal structure and controllable band structure. They are a kind of ideal two-dimensional direct band-gap semiconductor materials, which can be used not only to explore some basic and frontier physical problems such as valley polarization. It can also be widely used in nanodevices, optoelectronics and photocatalysis. In recent years, the chemical vapor deposition (CVD) technology has been introduced into the growth of these materials as a more effective preparation method than the traditional chemical synthesis or physical stripping, which can synthesize a large area of continuous. Thin and homogeneous monolayer TMDs with high crystal quality. Based on this, the progress of monolayer TMDs growth using CVD technology is introduced, and the effects of various process conditions (such as reaction temperature, current carrier gas, substrate, distance between precursor and substrate) on the growth and properties of monolayer TMDs are discussed. Finally, the ways and methods of controlling the size, coverage and thickness uniformity of monolayer TMDs by using CVD technology are discussed.
【作者单位】：安庆师范大学物理与电气工程学院;安庆美晶新材料有限公司;
【基金】：国家自然科学基金(11447197) 安徽省自然科学基金(1608085MA21) 安徽省教育厅资助项目(AQKJ2014B019)
【分类号】：TQ125.1

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