低维CdS纳米结构器件的制备及其光电性能研究

发布时间：2018-05-19 21:12

  本文选题：硫化镉 + 场效应晶体管　； 参考：《湖北工业大学》2017年硕士论文

【摘要】：目前,微电子超大集成电路的特征尺寸已经从深亚微米级发展到纳米尺度。随着电子器件集成度的进一步提高,微电子器件物理和工艺面临诸如器件加工极限、加工费用的成倍增加以及器件工作原理发生变化等一系列严峻挑战,成为未来微电子工业发展的瓶颈。而以量子输运机制为主导的固态量子器件,即纳米电子器件,相比于传统器件,其具有灵敏度高、能耗低、尺寸小、易集成的优点成为目前研究的热点。金属颗粒局域表面等离激元耦合半导体发光增强在光电探测和光催化等领域具有广泛的应用前景。本论文基于硫化镉(CdS)这种重要的II-VI族化合物低维半导体材料,制备了单根CdS纳米带器件并研究了S离子掺杂对其光电性能的影响;结合光刻技术对金属纳米颗粒与树枝状CdS复合结构进行了原位光学性能研究。本论文主要围绕以下三个部分相关研究内容展开:(1)研究了不同形貌低维CdS纳米结构的制备方法。通过化学气相沉积法制备了CdS纳米线、纳米带和树枝状的CdS纳米结构,得到不同形貌低维CdS纳米结构的生长工艺。(2)研究了S离子掺杂对单根CdS纳米带器件光电性能影响研究。通过化学气相沉积法在硅基底上制备了CdS纳米带,将不同剂量的S离子注入到CdS纳米带中,并对CdS纳米带进行表征,分析其晶体结构,并进一步通过光电性能的测试,研究S离子注入引入的缺陷对CdS纳米带性能产生的影响。结果表明,S离子注入引入的缺陷使CdS纳米带晶体质量发生变化,导致S离子注入后CdS纳米带的激子发光峰减弱,缺陷发光峰增强,并且它们之间的强度比随着注入剂量的改变可以进行调节。最后,通过对单根CdS纳米带场效应晶体管的转移特性曲线进行分析,证明了S离子注入引入的缺陷对CdS纳米带电学性能有较大影响,并进一步分析讨论了其对电学性能影响的原因。(3)结合光刻技术对金属纳米颗粒与树枝状CdS复合结构进行原位光学性能研究。通过热蒸发技术在树枝状CdS纳米结构沉积不同厚度的Au纳米颗粒。结合光刻技术研究同一根树枝状CdS的光学性能。与纯的三维树枝状的CdS纳米结构相比,不同厚度的Au纳米颗粒会导致三维树枝状CdS光致发光(PL)增强或淬灭。PL增强是由于Au纳米颗粒的局部表面等离激元共振(LSPR)效应,导致电子空穴对复合几率增加从而使得PL发光增强。而PL淬灭是由于Au纳米颗粒变大导致光散射增强,另一个方面当Au与CdS接触时,由于Au的功函数要比CdS的低电子将会从CdS到Au纳米颗粒转移,导致电子空穴对复合几率减小从而发生淬灭。这种方法可适用于不同的低维纳米结构,对于原位性能研究具有重要的研究意义。
[Abstract]:At present, the characteristic size of microelectronic VLSI has developed from deep sub-micron to nano-scale. With the further improvement of the integration of electronic devices, the physics and technology of microelectronic devices are facing a series of severe challenges, such as the device processing limit, the multiplicity of processing costs and the changes in the principle of device operation, etc. Become the bottleneck of the development of microelectronics industry in the future. Compared with the traditional devices, the solid-state quantum devices, which are dominated by quantum transport mechanism, have the advantages of high sensitivity, low energy consumption, small size and easy integration. The enhancement of semiconductor luminescence on the local surface of metal particles has a wide application prospect in the fields of photoelectricity detection and photocatalysis. Based on cadmium sulfide (CDs), an important low-dimensional semiconductor material of II-VI family compounds, a single CdS nanostrip device was prepared and the effect of S ion doping on its photoelectric properties was investigated. The in situ optical properties of metal nanoparticles and dendritic CdS composite structures were investigated by photolithography. In this thesis, the preparation methods of low dimensional CdS nanostructures with different morphologies were studied by using the following three parts. CdS nanowires, nanobelts and dendritic CdS nanostructures were prepared by chemical vapor deposition (CVD). The effects of S ion doping on the optoelectronic properties of single CdS nanobelts were investigated. CdS nanobelts were prepared on silicon substrate by chemical vapor deposition method. Different doses of S ions were implanted into CdS nanobelts. The CdS nanobelts were characterized, their crystal structures were analyzed, and the photoelectric properties were tested. The effects of defects introduced by S ion implantation on the properties of CdS nanobelts were investigated. The results show that the crystal quality of CdS nanobelts is changed due to the defects introduced by S + implantation, which leads to the decrease of exciton emission peak and the enhancement of defect luminescence peak of CdS nanobelts after S ion implantation. And the intensity ratio between them can be adjusted with the dose of implantation. Finally, by analyzing the transfer characteristic curve of a single CdS nanbbon field-effect transistor, it is proved that the defects introduced by S ion implantation have a great influence on the CdS nano-charged properties. The reason for its influence on electrical properties was discussed. The in situ optical properties of metal nanoparticles and dendritic CdS composite structures were studied by means of photolithography and photolithography. Au nanoparticles with different thickness were deposited in dendritic CdS nanostructures by thermal evaporation. The optical properties of the same dendritic CdS were studied by photolithography. Compared with the pure three-dimensional dendritic CdS nanostructures, different thickness au nanoparticles can lead to enhanced or quenched PL enhancement of three-dimensional dendritic CdS due to the local surface isoexciton resonance (LSP) effect of au nanoparticles. The photoluminescence is enhanced by increasing the recombination probability of the electron hole pair. The PL quenching is due to the increase of light scattering due to the enlargement of au nanoparticles. Another aspect is that when au is in contact with CdS, the work function of au will transfer from CdS to au nanoparticles because the work function of au is lower than that of CdS. The recombination probability of electron hole pair decreases and quenching occurs. This method can be applied to different low dimensional nanostructures and has important significance for in situ performance research.
【学位授予单位】：湖北工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ132.44

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