挠性板通孔电镀配方与工艺优化研究

发布时间：2018-05-21 16:12

本文选题：挠性板通孔 + 均镀能力　；参考：《电镀与精饰》2017年11期

【摘要】：为解决使用传统电镀液配方进行挠性板通孔电镀时出现的均镀能力(TP)差等问题,本文基于加速剂聚二硫二丙烷磺酸钠(SPS)、N,N-二甲基二硫代甲酰胺丙烷磺酸钠(DPS)的电化学性能测试,研究了整平剂对挠性板通孔电镀效果的影响,并对无整平剂的镀液体系中挠性板通孔电镀的影响因素进行了分析讨论。结果表明,SPS具有持续性的加速作用,是典型的加速剂,而DPS在高浓度条件下呈现出抑制效果,具有加速-整平双重特性;无整平剂体系下挠性板通孔的电镀效果(TP≥200%)明显要比有整平剂体系下的电镀效果(TP≈100%)要好,但是无整平剂条件下所得的铜镀层质量差;通过在无整平剂体系中加入DPS,利用DPS的微整平性能能够有效改善镀层质量。提高镀液中的铜离子浓度,降低酸的浓度、采用小电流密度、短时间电镀以及低气流量有利于提高通孔电镀的均镀能力。
[Abstract]:In order to solve the problem of average plating ability (TP) difference in electroplating with traditional electroplating solution for flexible plate through hole plating, this paper based on the electrochemical performance test of the accelerator poly two sulfur two propane sulfonate (SPS), N, N- two methyl two thiformamide propane sulfonate (DPS), and studied the effect of the leveling agent on the effect of the plating on the flexible plate through the hole. The influence factors of the electroplating of the flexible plate through the plating solution without the leveling agent were analyzed and discussed. The results show that SPS has a continuous acceleration effect and is a typical accelerator, while DPS has the inhibition effect under high concentration, with the double characteristics of acceleration and leveling, and the electroplating effect of the flexible plate through the non leveling agent system (TP > 200%). It is obviously better than the electroplating effect (TP 100%) under the leveling agent system, but the quality of the copper coating obtained under the condition of no leveling agent is poor. By adding DPS in the non leveling agent system, the quality of the coating can be improved effectively by using the micro leveling property of the DPS, the concentration of copper ions in the bath, the concentration of acid, the short current density, the short current density, the short current density, the short current density, and the short current density are used. Time electroplating and low gas flow rate are beneficial to improving the uniform plating ability of through hole plating.
【作者单位】：运城学院物理与电子工程系;电子科技大学电子薄膜与集成器件国家重点实验室;四川英创力电子科技有限公司;
【分类号】：TQ153

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