二维材料石墨烯和二硫化钼在场效应晶体管中的应用研究

发布时间：2018-06-13 19:17

本文选题：石墨烯纳米带 + 掩膜法　；参考：《东北师范大学》2015年硕士论文

【摘要】：石墨烯的发现,开启了科学界对二维材料的广泛研究。这种仅为数个原子厚度的二维材料因拥有新颖特别的物理和化学性质,在力学,光学,热学及电子学等方面都表现出了优异的性能,成为电子,传感器,催化和能源储存等方面理想的选择材料。目前研究较多的两种结构相似的二维材料是石墨烯和二硫化钼,这两种二维材料也是本论文的研究核心。本文基于石墨烯的优异性能,构建了石墨烯纳米带场效应晶体管,并研究了相关的电学性能。通过传统的机械剥离法制取石墨烯,又通过气相输运法制得了二氧化锡纳米带(SnO2),结合金膜掩膜和SnO2纳米带掩膜的方法一体化构建出了一维石墨烯纳米带场效应晶体管,并且对其电学性能进行测试。传统的石墨烯纳米带场效应晶体管的构建过程会引入一定的试剂,而且制备石墨烯纳米带和器件的过程是分开进行的。在此论文中,我们展示了一种简单新奇并且石墨烯纳米带和器件一体化构建的方法,沟道的长度和宽度分别由金膜的宽度和SnO2纳米带的宽度来决定。结果表示当石墨烯纳米带的宽度在330 nm以下时,器件在空气中表现出奇特的双极性场效应性能和高的迁移率,这得益于石墨烯纳米带和器件纯干无试剂污染的构建方法。由于石墨烯本身是零带隙,限制在一维结构会获得一定的带隙,而且带隙宽度和纳米带的宽度有关,这在一定程度上限制了它的应用。而另一种类似石墨烯的二维材料——二硫化钼,不仅具有石墨烯的许多优异性质,而且本身就具有一定的带隙宽度,可以直接用于场效应晶体管的构建,弥补了石墨烯的不足。在本文中,我们改进了机械剥离MoS2的方法,提高了剥离效率,同时构建了MoS2场效应晶体管,测试了相关电学性能,并对其氧化物的性能有所展望。
[Abstract]:The discovery of graphene has opened up a wide range of scientific studies on two-dimensional materials. This two-dimensional material, which is only a few atoms thick, has excellent mechanical, optical, thermal and electronic properties because of its novel and special physical and chemical properties. Ideal materials for catalysis and energy storage. At present, graphene and molybdenum disulfide are two kinds of two dimensional materials with similar structure, which are also the core of this thesis. Based on the excellent properties of graphene, the field effect transistor of graphene nanocrystalline was constructed, and the related electrical properties were studied. Graphene was prepared by traditional mechanical stripping method, and Sno _ 2 nanobelts were obtained by gas phase transport. One-dimensional graphene nanbbons field-effect transistors were constructed by combining gold film mask with Sno _ 2 nano-band mask. And the electrical properties of the test. Some reagents will be introduced into the construction of traditional graphene nanobelts field effect transistors, and the process of preparing graphene nanobelts and devices is separate. In this paper, we present a novel and simple method for the fabrication of graphene nanobelts and devices. The channel length and width are determined by the width of the gold film and the width of the SnO2 nanobelts, respectively. The results show that when the width of graphene nanobelts is below 330 nm, the devices exhibit peculiar bipolar field effect and high mobility in air, which is due to the construction method of graphene nanoribbons and devices without reagent contamination. Because graphene itself is a zero-band gap, a certain band gap can be obtained in one-dimensional structure, and the band gap width is related to the width of nanobelts, which limits its application to a certain extent. But another two-dimensional material, molybdenum disulfide, which is similar to graphene, not only has many excellent properties of graphene, but also has a certain band gap width, which can be directly used in the construction of field effect transistors and make up for the deficiency of graphene. In this paper, we improve the method of mechanical stripping of MoS2, and improve the stripping efficiency. At the same time, we construct MoS2 field-effect transistor, test the related electrical properties, and look forward to the performance of MoS2 oxides.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;TQ127.11

【相似文献】