透明导电CuI薄膜的制备及其在DSSC中的应用

发布时间：2018-07-05 03:25

  本文选题：碘化亚铜 + 高透过率　； 参考：《济南大学》2015年硕士论文

【摘要】：碘化亚铜(CuI)具有三种主要的晶体结构,其中γ-CuI是一种宽禁带p型半导体材料,禁带宽度为3.1 eV,在可见光范围内透明,且电阻率较低,适合应用于LED和染料敏化电池等光电子器件中。本文利用铜膜碘化法和真空热蒸发法制备CuI薄膜,探究了不同生长条件对其透明导电性能的影响,制备出高透过率、导电性能好的CuI薄膜,并初步尝试将其应用于全固态染料敏化电池中。具体研究内容和结果如下:1.采用铜膜碘化法制备CuI薄膜,分别研究了铜膜制备和碘化过程中各实验条件对CuI薄膜形貌、晶体结构、透过率和电学性能的影响。结果表明,铜膜的制备条件对CuI薄膜性能的影响并不大;碘化过程中,碘量是影响CuI薄膜的关键因素,这与CuI的导电机理有关,其导电主要是靠过剩的碘离子及铜空位,但是当碘量过高时,会导致碘单质剩余,容易附着在CuI薄膜的表面,影响CuI薄膜的透过性。2.利用真空热蒸发法制备CuI薄膜,研究发现衬底加热温度是影响其性能的关键因素。XRD测试表明所制备的CuI薄膜是γ-相的多晶薄膜,并且具有极高的(111)择优取向,在衬底加热温度为120°C时,可见光透过率的最大值接近100%,是目前文献报道的最好透光率。最低电阻率是1.0×10-2Ω·cm,对应的载流子浓度和霍尔迁移率分别是3.0×1019cm-3和25 cm2/Vs。3.对电化学沉积法制备ZnO薄膜的形貌进行了探究,通过调节电化学沉积前驱体溶液浓度,分别获得了三种不同形貌的ZnO:薄膜、纳米线和纳米片。在导电衬底上生长的不同氧化锌薄膜可以用作光阳极来组装染料敏化太阳能电池(DSSC)。电池的光电转换效率、量子效率及电化学阻抗谱测试表明,氧化锌纳米线具有较大的比表面积,可吸附较多染料;纳米线阵列的散射作用可提高光的利用率,并为光生载流子的收集提供了快速分离通道,所以用ZnO纳米线作为光阳极组装的DSSC具有最高的光电转换效率。4.根据ZnO、N719和CuI的电子亲和势和禁带宽度,理论确定了ZnO|dye|CuI型固态染料敏化电池能带图,组装的电池性能测试结果表明,真空热蒸发法是最佳的CuI薄膜沉积方式,最优的ZnO纳米线长度为2μm,电池最优效率为0.34,仍需进一步优化提高。
[Abstract]:Copper iodide (CuI) has three main crystal structures, of which 纬 -CuI is a wide bandgap p-type semiconductor material with a band gap of 3.1 EV, transparent in the visible range and low in resistivity. Suitable for LED and dye sensitized battery and other optoelectronic devices. In this paper, Cui thin films were prepared by iodization of copper films and vacuum thermal evaporation. The effects of different growth conditions on the transparent and conductive properties of CuI thin films were investigated. And it is applied to all solid state dye sensitized battery. The specific research contents and results are as follows: 1. Cui thin films were prepared by copper film iodization. The effects of different experimental conditions on the morphology, crystal structure, transmittance and electrical properties of copper films were studied. The results show that the preparation conditions of copper films have little effect on the properties of CuI thin films, and iodine content is the key factor affecting the properties of CuI thin films during iodization, which is related to the conductive mechanism of CuI films, and its conduction is mainly due to excess iodine ions and copper vacancies. However, when the iodine content is too high, it will lead to iodine single substance surplus, which will easily adhere to the surface of CuI thin film, and affect the transmittance of Cui thin film. 2. Cui thin films were prepared by vacuum thermal evaporation. It was found that the substrate heating temperature was the key factor affecting the properties of CuI thin films. XRD test showed that the CuI thin films were polycrystalline in 纬 -phase and had a very high (111) preferred orientation. At the substrate heating temperature of 120 掳C, the maximum transmittance of visible light is close to 100, which is the best transmittance reported in the literature. The lowest resistivity is 1.0 脳 10 ~ (-2) 惟 cm, the corresponding carrier concentration and Hall mobility are 3.0 脳 1019cm-3 and 25 cm ~ 2 / V 路s. 3, respectively. The morphology of ZnO thin films prepared by electrochemical deposition was studied. By adjusting the concentration of precursor solution, three kinds of ZnO films with different morphologies were obtained: thin films, nanowires and nanowires. Different ZnO thin films grown on conductive substrates can be used as photoanodes to assemble dye sensitized solar cells (DSSC). The photoelectricity conversion efficiency, quantum efficiency and electrochemical impedance spectroscopy of the battery show that ZnO nanowires have large specific surface area and can absorb more dyes, and the scattering effect of nanowire array can improve the utilization of light. Therefore, the DSSC assembled with ZnO nanowires as photoanode has the highest photoelectric conversion efficiency. According to the electron affinity potential and band gap of ZnON719 and CuI, the energy band diagram of ZnON719 and CuI solid dye sensitized battery is theoretically determined. The test results of the performance of the assembled cells show that the vacuum thermal evaporation method is the best method for depositing Cui thin films. The optimal length of ZnO nanowires is 2 渭 m and the optimal efficiency of the cell is 0.34, which still needs to be further optimized.
【学位授予单位】：济南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ131.21;TB383.2

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