J-R型氮化铝陶瓷静电吸盘的设计与制造

发布时间：2018-08-04 13:35

【摘要】：静电吸盘是半导体工艺中的硅片夹持工具。静电吸盘相对于其他硅片夹持技术有着明显优势,但静电吸盘相关技术在国内却基本是空白一片。本文的目的即研究探索静电吸盘相关技术。典型的静电吸盘夹持系统一般是一个三明治结构:上下两层为电极,中间夹着一层电介质。而在实际简单的应用中,硅片充当上表面的电极,下电极和电介质被整合制造在一个器件中,即称为静电吸盘。静电吸盘是以静电吸附为基本原理在施加外部高压后,通过静电吸盘对硅片的库仑吸附力或J-R吸附力来固定硅片的。本文根据静电吸盘工作机理设计了一款三层型结构静电吸盘(J-R层、电极层、基底层),并通过各层功能需求选择其制造材料及工艺。基底层选择导热性良好并具有优良综合性能的氮化铝材料,并选择HTCC的方法作为基底层制造工艺;电极层选择具有优异的常温导电性、硬度、附着性及耐弯折性的银浆材料通过丝网印刷技术制成;J-R层作为J-R型静电吸盘的重要功能部分先确定选用氮化铝作为其主体材料,并通过添加调阻剂来调节J-R层体电阻率。本文在第四章中详述了J-R层的设计工作,通过对材料导电机理及渗流理论的研究,选择了氮化钛作为J-R层的调阻剂,并对添加不同TiN含量的J-R层式样片进行了组织分析,AlN/TiN复合陶瓷中组织致密其中并无杂质相影响。之后测量不同TiN含量的J-R层试样片体电阻率及在300V、500V、800V下对硅片的吸附力。综合测试结果分析知随着TiN含量的增加J-R层整体电阻率呈下降趋势且在TiN增至15%时J-R层体电阻率降至109Ω·cm数量级基本满足J-R层功能性需要,而吸附力则随着TiN含量的增加而不断增加,无论在300V,500V还是800V电压下TiN含量为15%的样片都具有较大的吸附力,这与预期中体电阻率与吸附力的关系相符合。
[Abstract]:Electrostatic sucker is a silicon wafer clamping tool in semiconductor process. Compared with other silicon wafer gripping technology, electrostatic sucker has obvious advantages, but electrostatic sucker technology is basically blank in our country. The purpose of this paper is to study and explore the related technology of electrostatic sucker. A typical electrostatic chuck gripping system is usually a sandwich structure: the upper and lower layers are electrodes with a layer of dielectric in the middle. In practical applications, the silicon wafer acts as the electrode on the upper surface, and the lower electrode and dielectric are integrated into one device, called electrostatic sucker. Electrostatic chuck is based on electrostatic adsorption principle, after applying external high pressure, the silicon wafer is fixed by Coulomb adsorption force or J-R adsorption force of electrostatic sucker. A three-layer electrostatic sucker (J-R layer, electrode layer, base layer) is designed according to the working mechanism of electrostatic sucker, and its manufacturing material and process are selected according to the functional requirements of each layer. Aluminum nitride materials with good thermal conductivity and excellent comprehensive properties are selected as the base layer manufacturing process, and the electrode layer selection has excellent electrical conductivity and hardness at room temperature. The adhesion and flexural resistance of silver paste material is made by screen printing technology. The important function part of J-R electrostatic sucker is to select aluminum nitride as its main material, and adjust the resistivity of J-R layer by adding resistive agent. In chapter 4, the design of J-R layer is described in detail. Through the study of conductive mechanism and percolation theory, titanium nitride is selected as resistive adjuster of J-R layer. The microstructure of J-R laminated samples with different TiN content was analyzed. The microstructure of AlN / tin composite ceramics was densified and there was no impurity phase effect. The bulk resistivity of J-R layer samples with different TiN content and the adsorption force on silicon wafer at 300V ~ 500V ~ (-800V) were then measured. The comprehensive test results show that the overall resistivity of J-R layer decreases with the increase of TiN content, and when TiN increases to 15, the bulk resistivity of J-R layer decreases to 109 惟 cm to basically meet the functional needs of J-R layer. However, the adsorption power increases with the increase of TiN content. Both the sample with TiN content of 15% at 300V / 500V or 800V voltage have higher adsorption capacity, which is consistent with the expected relationship between the midbody resistivity and the adsorption capacity.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ174.7

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