单颗金刚石磨粒刻划蓝宝石的试验研究

发布时间：2018-08-27 18:18

【摘要】：蓝宝石以其优良的物理性能、化学性能、电学性能、光学性能等,使其广泛地应用于多个领域。蓝宝石切割及研磨是蓝宝石加工过程中重要的加工工序,目前主要利用金刚石磨料工具来完成。但对于金刚石磨粒在微米尺度下与蓝宝石的相互作用机理,尚还未被完全解释清楚。本文利用金刚石磨粒单颗刻划的方法研究了蓝宝石材料的去除机理。试验利用两种不同顶锥角的金刚石磨粒在微米尺度下对A面和C面蓝宝石进行了压痕试验,平动刻划试验,转动刻划试验以及钟摆式刻划试验。跟踪采集了不同刻划速度,不同刻划深度下的法向力及切向力,观察了刻划后的工件表面形貌。比较分析了各刻划参数对材料去除的影响,以及不同晶面蓝宝石的刻划差异。全文主要研究成果概述如下:(1)蓝宝石材料在受到金刚石磨粒压痕作用的下方产生了沿一定方向的变形,而在磨粒作用的外部产生裂纹。晶体结构对蓝宝石受压时所产生的裂纹方向有明显的影响。C面蓝宝石的侧向裂纹长度略小于A面蓝宝石的侧向裂纹长度。(2)在所有的刻划试验中,磨粒顶锥角对刻划力有明显的影响,刻划力随着顶锥角的增大而增大,而C面的蓝宝石的刻划力大于A面蓝宝石的刻划力;(3)随着刻划深度的增加,刻划力明显随之增加,在低速情况下,刻划速度对刻划力没有明显的影响,但是在高速情况下,随着刻划速度的提高,刻划力略有所减小;(4)在微米尺度下,A面和C面蓝宝石主要以脆性断裂为主。在金刚石磨粒的作用下方,形成明显的裂纹和粉末化的破碎。对于A面蓝宝石,在磨粒的影响区,出现河流状的裂纹,对于C面蓝宝石则出现了台阶状的破碎。
[Abstract]:Sapphire has been widely used in many fields due to its excellent physical, chemical, electrical and optical properties. The cutting and grinding of sapphire is an important process in the process of sapphire processing. At present, diamond abrasive tools are mainly used to complete the cutting and grinding of sapphire. However, the mechanism of diamond abrasive interaction with sapphire at micron scale has not been fully explained. In this paper, the removal mechanism of sapphire material has been studied by the method of single diamond abrasive. In this paper, two kinds of diamond abrasive particles with different top cone angles are used to test the indentation, translation, rotation and pendulum of A plane and C plane sapphire at micron scale. The normal force and tangential force at different scratching speed and depth were collected and the surface morphology of the workpiece was observed. The effect of the parameters on the material removal and the difference of the sapphire with different crystal faces are compared and analyzed. The main research results are summarized as follows: (1) the sapphire material is deformed along a certain direction under the action of diamond abrasive indentation and cracks occur outside the abrasive particle. The crystal structure has obvious influence on the crack direction of sapphire under compression. The lateral crack length of C plane sapphire is slightly smaller than that of A plane sapphire. (2) in all the characterization tests, The top cone angle of abrasive particles has an obvious influence on the scratching force, and the scratching force increases with the increase of the top cone angle, while the scratching force of C plane sapphire is greater than that of A plane sapphire. (3) with the increase of the depth of the engraving, the scratching force increases obviously. At low speed, the scratching speed has no obvious effect on the scratching force, but at high speed, the scratching force decreases slightly with the increase of the velocity. (4) at the micron scale, the brittle fracture is the dominant factor in the surface A and C sapphire. Under the action of diamond abrasive particles, obvious cracks and crushing of powder are formed. For A side sapphire, there are fluvial cracks in the affected zone of abrasive particles, while for C plane sapphire there are steps.
【学位授予单位】：华侨大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TQ164

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