聚合物场效应晶体管及其传感特性研究

发布时间：2018-01-31 02:01

本文关键词： 气体传感器多孔半导体薄光电晶体管 ‘给-受’共轭聚合物半导体聚合物薄膜晶体管　出处：《合肥工业大学》2016年硕士论文　论文类型：学位论文

【摘要】：聚合物半导体材料以其多样的分子设计、轻质、机械柔性、与柔性基底良好的相容性、可溶液加工性等特点,使得基于聚合物半导体的场效应晶体管在电子皮肤、电子舌、电子鼻、光电晶体管等先进电子领域具有广泛的应用前景。本论文研究了聚异靛蓝衍生物PBIBDF-BT场效应晶体管的制备方法、电学性能与传感特性等几个方面,主要内容与工作如下：(1)制备了一种氧敏感性的PBIBDF-BT聚合物薄膜晶体管。溶液法制备的器件真空中的电子迁移率最高可达1.80 cm2V-1s-1。器件表现出对不同氧环境变化的空穴和电子载流子双传输响应行为,P型沟道和N型沟道的迁移率、阈值电压、开关比和亚阈值摆幅都随着半导体层对氧的吸附、解吸附过程的变化而变化。实验进一步计算了陷阱密度的变化,分析了氧环境变化影响器件场效应性能的内在原因。此外,漏电流对不同气氛环境中的依赖性,表明此双极型半导体场效应晶体管器件可应用至氧传感器中。(2)溶液法制备多孔PBIBDF-BT薄膜及其在化学传感器中的应用。将PBIBDF-BT聚合物半导体材料与高分子低聚物聚己二酸(1,4)丁二醇酯(PBA)按照一定比例共混后旋涂成膜,两相之间会发生相分离,使用丙酮将PBA组分除去后,可获得一种多孔结构的PBIBDF-BT薄膜,且PBA组分的含量可以调控多孔膜的形貌。基于多孔膜的底栅顶接触的传感器件表现出对NH3优异的选择性,且在10 ppm时灵敏度可高达800以上,响应速度也在几秒以内。此外,器件的P型沟道和N型沟道的迁移率、阈值电压、漏极电流等参数都随着NH3浓度的变化而相应变化。(3)制备了一种基于聚合物半导体PBIBDF-BT的光电晶体管。此器件展示出对入射光的空穴和电子载流子双传输响应,且具有小于14 ms的光转换速度。P型沟道的光电流开关比和光响应度的值最大分别可达4552和108.43 mAW-1,N型沟道两种参数最大可达1044和38.72 mAW-1。PBIBDF-BT薄膜表现出对红光更明显的选择性,且IDS随着光强的增加而增加。此外,通过控制旋涂转速制备出不同迁移率的半导体薄膜器件,讨论了迁移率对光电晶体管光响应性能的影响。
[Abstract]:Polymer semiconductor materials are characterized by their diverse molecular design, light weight, mechanical flexibility, good compatibility with flexible substrates and processability of solution. Make polymer semiconductor based field effect transistors in electronic skin, electronic tongue, electronic nose. Optoelectronic transistors and other advanced electronic fields have a wide range of applications. In this paper, the preparation of poly (isoindigo) derivative PBIBDF-BT field effect transistors is studied. Electrical properties and sensing characteristics. The main contents and work are as follows:. An oxygen-sensitive PBIBDF-BT polymer thin film transistor was prepared. The electron mobility of the device prepared by solution method in vacuum is up to 1.80. Cm2V-1s-1. The device exhibits the double transport response behavior of holes and electron carriers under different oxygen conditions. The mobility, threshold voltage, switching ratio and sub-threshold swing of P-channel and N-channel vary with the adsorption of oxygen and the desorption process of semiconductor layer. The internal cause of the effect of oxygen environment on the field effect performance of the device is analyzed. In addition, the dependence of leakage current on the field effect in different atmosphere is analyzed. It shows that this bipolar semiconductor field effect transistor device can be applied to oxygen sensor. The preparation of porous PBIBDF-BT thin films by solution method and its application in chemical sensors. The PBIBDF-BT polymer semiconductor materials and polymer oligomer poly (adipate) 1 were prepared. 4) butanediol ester (PBA) was prepared by spin-coating film after blending with a certain proportion. Phase separation occurred between the two phases and the PBA component was removed by acetone. A porous PBIBDF-BT thin film can be obtained. And the content of PBA can control the morphology of the porous film. The sensor device based on the bottom gate top contact of the porous film shows excellent selectivity to NH3. In addition, the mobility and threshold voltage of P-channel and N-channel of the device can reach more than 800 at 10 ppm, and the response speed is within a few seconds. The drain current and other parameters change with the change of NH3 concentration. A kind of phototransistor based on polymer semiconductor PBIBDF-BT has been fabricated. This device shows the double transmission response to the incident light in both hole and electron carrier. The photocurrent switching ratio and the optical responsivity of the channel with the optical conversion speed of less than 14 Ms can reach 4552 mAW-1 and 108.43 mAW-1 respectively, and the photocurrent switching ratio and the optical responsivity of the channel are up to 4552 and 108.43 mAW-1, respectively. The maximum parameters of N-channel can reach 1044 and 38.72 mAW-1.PBIBDF-BT, which show a more obvious selectivity to red light. Moreover, the IDS increases with the increase of light intensity. In addition, different mobility semiconductor thin film devices are fabricated by controlling spin coating speed, and the effect of mobility on photoresponse performance of phototransistors is discussed.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O631;TN386

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