嵌段共聚物的导向自组装

发布时间：2018-03-08 14:53

本文选题：导向自组装　切入点：嵌段共聚物　出处：《化学进展》2017年04期 　论文类型：期刊论文

【摘要】：嵌段共聚物由于其在纳米尺度的自组装能力,通过在薄膜中的自组装可以得到特征尺寸小于10nm的周期性图形结构,近年来被广泛研究。导向自组装(Directed Self-Assembly,DSA)充分利用了嵌段共聚物在薄膜中进行自组装的优点,将"自下而上"的嵌段共聚物薄膜自组装技术和"自上而下"的光学光刻或电子束光刻等制备导向图形的技术结合起来。嵌段共聚物通过分子设计可得到层状、柱状、孔洞状等形貌多样的纳米结构。光刻模板表面的化学不均匀性使得嵌段共聚物和基底表面之间的相互作用可控,从而引导嵌段共聚物薄膜在一定的空间取向上定向排列。目前在导向自组装中常用的两种方法有直接在基底表面通过光刻制得前图形模板的制图外延法(几何控制)和基于对光刻模板表面进行化学修饰比如在模板表面接枝上一层中性层材料,从而通过化学诱导实现嵌段共聚物的定向自组装的化学外延法(化学控制)。导向自组装技术通过对微相结构的裁剪、表面修饰和尺寸控制,可以得到特征尺寸更小、密度更大、有序性更好的纳米图形,正逐渐成为最有前途的先进光刻技术方法之一。
[Abstract]:Because of its self-assembly ability at nanometer scale, block copolymers can obtain periodic graphic structures with characteristic size less than 10 nm by self-assembly in films. In recent years, it has been widely studied. Directed Self-Assembled Self-Assembled DSAs make full use of the advantages of block copolymers for self-assembly in thin films. Combining "bottom-up" block copolymer film self-assembly technology with "top-down" optical lithography or electron beam lithography to prepare oriented patterns. Block copolymers can be layered and columnar by molecular design. The chemical inhomogeneity of the surface of the lithography template makes the interaction between the block copolymer and the substrate surface controllable. At present, two methods commonly used in directional self-assembly are the drawing epitaxy method (geometric control), which is used to fabricate the pre-pattern template directly on the substrate surface by photolithography. And based on chemical modification of the surface of the lithography template, such as grafting a layer of neutral layer material on the surface of the template, Thus, the chemical epitaxy method of directional self-assembly of block copolymers by chemical induction (chemical control / self-assembly) can obtain smaller characteristic size and higher density by cutting the microphase structure, modifying the surface and controlling the size of the block copolymers. Nano-graphics with better order is becoming one of the most promising advanced lithography techniques.
【作者单位】：北京师范大学化学学院;
【分类号】：O631.1

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