氧化铟掺杂的氧化镓光催化固氮性能研究

发布时间：2018-03-16 00:00

  本文选题：氧化铟　切入点：氧化镓　出处：《环境科学学报》2017年08期 　论文类型：期刊论文

【摘要】：成功将氧化铟掺杂到氧化镓上制备了In_2O_3/Ga_2O_3催化剂,并利用X射线衍射(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)、紫外漫反射光谱(UV-Vis DRS)、光致发光光谱(PL)和电感耦合等离子体发射光谱(ICP-AES)等表征手段对In_2O_3/Ga_2O_3进行了分析.同时,进一步考察了In_2O_3/Ga_2O_3的光催化固氮性能.结果表明,In_2O_3的引入提高了Ga_2O_3的光吸收性能和氧空位的比例,并且有利于其表面光生电子和空穴的分离.当In_2O_3/Ga_2O_3材料用于光催化固氮时,其最佳In_2O_3掺杂量为2.29%,最佳材料焙烧温度为500℃.最后,研究了空穴捕获剂种类的影响,发现在叔丁醇的体系中,In_2O_3/Ga_2O_3的光催化固氮效率最高.此外,氮源对固氮效果也存在较大影响.以空气作为氮源的光催化固氮过程因存在间接固氮过程,相对于以高纯氮气作为氮源的光催化固氮效率更高.
[Abstract]:In_2O_3/Ga_2O_3 catalyst was successfully prepared by doping indium oxide onto gallium oxide. In_2O_3/Ga_2O_3 was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-Vis DRS (UV diffuse reflectance spectroscopy), photoluminescence (PL) and inductively coupled plasma emission spectroscopy (ICP-AES). The photocatalytic nitrogen-fixation performance of In_2O_3/Ga_2O_3 was further investigated. The results showed that the introduction of in _ 2O _ 3 improved the photoabsorption performance of Ga_2O_3 and the ratio of oxygen vacancies, and was beneficial to the separation of photogenerated electrons and holes on the surface of Ga_2O_3. When In_2O_3/Ga_2O_3 was used for photocatalytic nitrogen-fixation, The optimum doping amount of In_2O_3 is 2.29 and the best material calcination temperature is 500 鈩，

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