高纯超薄氧化铝制备

发布时间：2018-01-02 04:17

本文关键词：高纯超薄氧化铝制备　出处：《无机盐工业》2016年11期 　论文类型：期刊论文

【摘要】：随着科学技术的迅猛发展以及各行业要求的不断提升,薄膜类Al2O3开始受到瞩目,其需求不断增长。选择价廉易得的无机盐AlCl_3为铝前驱体,利用其与水共同作用通过ALD技术沉积制备得到的Al_2O_3薄膜。该方法沉积温度范围广,在50~400℃均能得到致密均一的薄膜(通过SEM表征),相应的沉积速率为0.03~0.11 nm/次,能够满足各种不同工艺需求。通过XPS对薄膜成分进行分析,经过刻蚀之后,各沉积温度下Al与O的原子百分数之比为2∶(2.89~3.2),与Al_2O_3十分吻合。所得薄膜杂质总含量小,最低可达1.3%(原子百分数),纯度高。
[Abstract]:With the rapid development of science and technology and the requirements of the industry continues to improve, the film Al2O3 began to attract attention, the growing demand. Choose cheap inorganic salt AlCl_3 for aluminum precursor, with the water through the combined action of Al_2O_3 thin films prepared by deposition of ALD technology. The deposition temperature range, thin film get all the dense and uniform 50~400 C (measured by SEM), the deposition rate is 0.03~0.11 nm/, can meet the various needs of different process. Through the XPS component of the films was analyzed, after etching after the deposition temperature of Al and O atomic ratio is 2: (2.89~3.2), very agree with Al_2O_3. The total content of impurities in the films, the minimum to 1.3% (atom percent), high purity.

【作者单位】：江南大学;
【分类号】：TQ133.1;TB383.2
【正文快照】： 1研究背景氧化铝(Al2O3)因其自身优良的性质可广泛用于传感器制备、航空航天、电子设备屏幕制作、精密仪器制造以及集成电路等诸多领域[1-2]。此外,Al2O3材料有较高的相对介电常数,并且高带隙(8.7 e V)、高势垒导致其隧穿电流小。在室温下Al2O3的介电子被激发到导带中的几率小

【相似文献】