MPCVD法同质外延生长单晶金刚石

发布时间：2018-01-23 13:20

本文关键词： 微波等离子体化学气相沉积同质外延单晶金刚石　出处：《新型炭材料》2017年01期 　论文类型：期刊论文

【摘要】：利用微波等离子体化学气相沉积(MPCVD)法在高温高压(HPHT)下制备的单晶片上进行单晶金刚石同质外延生长,研究了甲烷浓度和衬底温度对金刚石生长的影响。利用扫描电子显微镜与激光拉曼光谱仪对生长前后的样品进行表征。结果表明,利用HPHT单晶片上生长时,主要为层状生长和丘状生长模式,丘状生长易出现多晶结构。降低甲烷浓度能够降低丘状生长密度,提高金刚石表面平整度;金刚石生长速率随甲烷浓度、工作气压和衬底温度的增加而提高,但过高的甲烷浓度(72%)和衬底温度(1 150℃)会降低金刚石的质量。所生长出的单晶金刚石质量较为理想,衬底与生长层之间过渡比较自然,金刚石结晶度高,缺陷密度小,但随膜层增厚,非晶碳含量有所增加。
[Abstract]:By microwave plasma chemical vapor deposition (MPCVD) method in high temperature and high pressure (HPHT) single crystal film prepared on single-crystal diamond homoepitaxial growth, studied the effect of methane concentration and substrate temperature on diamond growth. The growth of samples before and after using scanning electron microscopy and laser Raman spectrometer was investigated. The results show that the use of HPHT single chip growth, mainly layered growth and mound growth pattern, mound growth prone to polycrystalline structure. The decrease of methane concentration can reduce the mound growth density, improve the surface roughness of diamond; diamond growth rate increases with the increase of methane concentration, working pressure and substrate temperature increased, but high concentration of methane (72%) and substrate temperature (1150 DEG C) will reduce the quality of diamond. Diamond quality growth is ideal, between substrate and layer growth transition more natural, The diamond crystallinity is high and the defect density is small, but the amorphous carbon content increases with the thickening of the film layer.

【作者单位】：武汉工程大学材料科学与工程学院湖北省等离子体化学与新材料重点实验室;
【分类号】：TQ163
【正文快照】： Homoepitaxial growth of single crystal diamond bymicrowave plasma chemical vapor depositionYAN Lei,MA Zhi-bin,CHEN Lin,FU Qiu-ming,WU Chao,GAO Pan(Key Laboratory of Plasma Chemical and Advanced Materials of Hubei Province,School of Material Science and E

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