直流辉光放电对石墨烯氮掺杂的制备与特性

发布时间：2018-02-26 23:21

本文关键词： 直流辉光放电氮掺杂石墨烯等离子体多物理场耦合分析原子层沉积(ALD)　出处：《微纳电子技术》2017年08期 　论文类型：期刊论文

【摘要】：在原子层沉积(ALD)的腔室内,采用直流辉光放电技术,以N2等离子体作为掺杂源制备了氮掺杂石墨烯,考察了电场方向和掺杂时间对石墨烯的掺杂特性影响。喇曼光谱和高分辨率X射线光电子能谱(XPS)测试表明,随着掺杂时间的延长,氮的掺杂量逐渐提高,并且负电场较正电场具有更高的掺杂效率,在-800 V电场、N2等离子体掺杂2 h的条件下,石墨烯中氮与碳的原子比达到9.5%。同时,采用Comsol Multiphysics软件模拟了腔室内正负电场情况下的等离子体分布,结果表明电极盘为负电时,腔室内的放电区域更加发散,有利于掺杂离子与自由基到石墨烯表面的扩散。
[Abstract]:Nitrogen doped graphene was prepared by direct current glow discharge (DC glow discharge) in the chamber of atomic layer deposition (ALD) with N2 plasma as the dopant source. The effects of electric field direction and doping time on the doping characteristics of graphene were investigated. Raman spectra and high resolution X-ray photoelectron spectroscopy (XPS) measurements showed that the amount of nitrogen doping increased with the increase of doping time. The negative electric field has higher doping efficiency than the positive electric field. The atomic ratio of nitrogen to carbon in graphene can reach 9.5% under the condition of -800 V electric field and N2 plasma doping for 2 h. At the same time, Comsol Multiphysics software was used to simulate the plasma distribution in the chamber with positive and negative electric field. The results show that the discharge region of the chamber becomes more divergent when the electrode plate is negative, which is conducive to the diffusion of doped ions and free radicals to the surface of graphene.
【作者单位】：中国科学院微电子研究所微电子仪器设备研究中心;中国科学院大学;中国科学院微电子研究所微电子器件与集成技术重点实验室;集成电路测试技术北京市重点实验室;
【基金】：国家自然科学基金青年基金资助项目(61604175,61404170) 国家重大科研仪器研制资助项目(61427901)
【分类号】：TQ127.11

【参考文献】