石英晶片剪切增稠抛光优化实验

发布时间：2018-02-27 09:13

本文关键词： 石英晶片剪切增稠抛光抛光液转速工件倾斜角度磨粒质量分数磨粒粒度　出处：《纳米技术与精密工程》2017年03期 　论文类型：期刊论文

【摘要】：剪切增稠抛光(STP)是利用非牛顿流体抛光液在抛光过程中产生的剪切增稠效应实现工件表面高效、低损伤的抛光.本文以材料去除率和表面粗糙度作为评价指标;采用田口法对石英晶片剪切增稠抛光过程中的4个关键影响参数:抛光液转速、工件倾斜角度、磨粒粒度、磨粒质量分数进行优化实验分析,得到最优抛光参数组合以及各主要工艺参数对抛光效果的影响程度;通过实验验证了优化结果的可靠性.对于材料去除率,工件倾斜角度的影响最明显,抛光液转速次之,再次是磨粒质量分数,磨粒粒度影响最小;对于表面粗糙度,抛光液转速的影响最明显,工件倾斜角度次之,再次是磨粒质量分数,磨粒粒度影响最小.通过信噪比平均响应分析,材料去除率优化参数组合为:Al_2O_32 500#、磨粒质量分数18%、抛光液转速80 r/min、工件倾斜角度15°,石英晶片材料去除率最高达到12.25μm/h;石英晶片最佳表面粗糙度参数组合为:Al_2O_35 000#、磨粒质量分数18%、抛光液转速80 r/min、工件倾斜角度15°,抛光1 h后石英晶片表面粗糙度R_a由300.08 nm降低至4.26 nm.
[Abstract]:Shear thickening polishing (STP) is a kind of high efficiency and low damage polishing, which is realized by the shear thickening effect produced by non-Newtonian fluid polishing. In this paper, the material removal rate and surface roughness are taken as the evaluation index. Taguchi method was used to optimize the four key parameters in the process of shear thickening and polishing of quartz wafer: the rotational speed of polishing fluid, the angle of workpiece inclination, the particle size and the mass fraction of abrasive particles. The optimal polishing parameters combination and the influence of main process parameters on the polishing effect are obtained, and the reliability of the optimized results is verified by experiments. For the material removal rate, the influence of the workpiece tilt angle is the most obvious, and the polishing fluid rotation speed is the second. Thirdly, the effect of abrasive particle mass fraction is the least. For surface roughness, the effect of polishing fluid speed is the most obvious, the workpiece tilting angle is the second, and the second is the abrasive particle mass fraction, the second is the abrasive particle mass fraction, the second is the abrasive particle mass fraction. The effect of particle size is the least. Through the analysis of average SNR response, The optimized parameters of material removal rate are as follows: 1: al _ 2O _ 2O _ (32) 500 #.With mass fraction of abrasive particles 18, rotation speed of polishing liquid 80 r / min, angle of workpiece tilting 15 掳, removal rate of quartz wafer material up to 12.25 渭 m / h; optimum surface roughness parameter of quartz wafer is composed of:% Al _ 2O _ 2O _ 35 000 #k and abrasive mass. The surface roughness of quartz wafer decreased from 300.08 nm to 4.26 nm after 1 h of polishing, with the mass fraction of 18, the rotational speed of the polishing liquid 80 rpm, the angle of workpiece tilting 15 掳, and the surface roughness of quartz wafer reduced from 300.08 nm to 4.26 nm after 1 hour polishing.
【作者单位】：浙江工业大学超精密加工研究中心;金华出入境检验检疫局;
【基金】：国家自然科学基金资助项目(51175166,51275476) 浙江省科技计划公益资助项目(2013C31014)
【分类号】：O786;TQ127.2

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