离子注入技术在光解水电极材料改性中的应用

发布时间：2018-03-10 08:30

  本文选题：光解水制氢　切入点：离子注入技术　出处：《科学通报》2017年25期 　论文类型：期刊论文

【摘要】：半导体光催化分解水制氢是一种装置简单,相对廉价可靠的能源利用方式.开发具有高光制氢效率的光电极材料一直是材料科学研究领域的热点.目前的半导体光催化材料普遍面临缺乏可见光吸收和载流子分离效率低的问题.这些问题导致目前光解水制氢电极材料的效率较低,达不到商业应用的要求.因此,发展改性的光电极材料尤为重要.离子注入技术作为一种重要的半导体改性技术,相对于传统的化学掺杂方法具有诸多优点.离子注入方法能够保证注入离子的纯度,能够通过控制注入离子的能量和剂量从而控制注入杂质的浓度和深度分布.离子注入技术可以使掺杂不受扩散系数和化学结合力等因素的限制,各种元素均可掺杂.因此,离子注入技术在光电极材料改性方面具有很大的应用前景.本文首先介绍了光解水制氢及离子注入技术的基本原理,然后结合本课题组及其他学者的工作,综述了目前离子注入技术改性光电极材料的特点和研究进展,最后展望了离子注入技术在光解水电极改性应用的未来发展方向.
[Abstract]:Semiconductor photocatalytic decomposition of water for hydrogen production is a simple device. The development of photoelectrode materials with high efficiency of hydrogen production has been a hot spot in the field of material science. Currently semiconductor photocatalytic materials are generally faced with the lack of visible light absorption and current carrier. Problems with low separation efficiency. These problems lead to low efficiency of the current photodissociated water electrode materials for hydrogen production. Therefore, the development of modified photoelectrode materials is particularly important. Ion implantation technology as an important semiconductor modification technology, Compared with the traditional chemical doping method, the ion implantation method can guarantee the purity of the implanted ion. The concentration and depth distribution of impurity can be controlled by controlling the energy and dose of implanted ions. The ion implantation technique can make the doping not limited by the factors such as diffusion coefficient and chemical binding force, and all elements can be doped. Ion implantation technology has great application prospect in the modification of optoelectronic electrode materials. In this paper, the basic principles of photolysis water hydrogen production and ion implantation technology are introduced, and then combined with the work of our group and other scholars, The characteristics and research progress of photoelectrode material modified by ion implantation technology are reviewed. Finally, the future development of ion implantation technology in the modification of photodissociated water electrode is prospected.
【作者单位】： 武汉大学物理科学与技术学院武汉大学离子束功能材料研究中心;
【基金】：国家自然科学基金(11522543,11475129,51571153) 江苏省自然科学基金(BK20161247,BK20141212) 湖北省自然科学基金(2016CFA080)资助
【分类号】：TB34;TQ116.2
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本文编号：1592547