Al掺杂ZnO透明导电红外反射薄膜的制备与性能研究

发布时间：2018-03-16 04:26

  本文选题：AZO薄膜　切入点：AZO陶瓷靶材　出处：《浙江大学》2015年硕士论文　论文类型：学位论文

【摘要】：近年来,随着半导体、计算机、液晶显示、有机电致发光显示、等离子体显示器以及太阳能等产业的发展,透明导电氧化物薄膜随之蓬勃发展起来。其中,应用最为广泛的为ITO薄膜,但因其中的In为稀有元素,并且有毒,因此寻找无铟的透明导电薄膜材料显得尤为重要。20世纪80年代发展起来的掺A1的ZnO薄膜(AZO)成为最有发展前景的材料,它具有与ITO薄膜相比拟的光电性质,并且具有来源广泛、价格低廉、无毒、在H等离子体中稳定等ITO薄膜所无法相比的优点。本文利用脉冲激光沉积(PLD)的方法在玻璃衬底上沉积AZO薄膜,通过X射线衍射(XRD)、扫描电子显微镜(SEM)、光电子能谱(XPS)、四探针以及分光光度计等分析方法,对薄膜的物相结构、表面形貌、电学以及光学性能进行表征。针对PLD设备对靶材尺寸的要求,通过常压烧结的方法制备了AZO陶瓷靶材,并研究了靶材质量对薄膜性能的影响规律。研究结果表明,在1200℃下烧结3小时的AZO陶瓷靶材制备的AZO薄膜具有较好的电学和光学性能。因此后面的实验中用到的靶材均是1200℃下烧结3小时的AZO陶瓷靶材。系统研究了靶材中Al2O3含量、衬底温度以及沉积时间等参数对AZO薄膜的结晶质量、电学和光学性能的影响规律,获得了性能优异的AZO薄膜。研究表明,薄膜最佳沉积条件为：激光能量为250 mj、靶材到衬底的距离为60mm、衬底温度为150℃、沉积时间60分钟、靶材中A1203含量2wt%。制备的薄膜的晶粒尺寸较大约为32.2 nm,电阻率最低为1.5×10-4Ω·cm,1000-2500 nm波长范围平均近红外反射率高达55.3%。
[Abstract]:In recent years, with the development of semiconductor, computer, liquid crystal display, organic electroluminescent display, plasma display, solar energy and other industries, transparent conductive oxide films have developed rapidly. The most widely used films are ITO films, but because in is rare and toxic, Therefore, it is very important to find transparent conductive thin films without indium. In 80s, the Al doped ZnO thin film developed in the 20th century has become the most promising material. It has the optoelectronic properties comparable to ITO thin films, and has a wide range of sources. In this paper, AZO thin films on glass substrates have been deposited by pulsed laser deposition method, which has the advantages of low price, non-toxic and stable in H plasma. The phase structure and surface morphology of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray diffraction (SEM), photoelectron spectroscopy (XPS), four-probe and spectrophotometer. According to the requirements of PLD equipment for target size, AZO ceramic target was prepared by atmospheric pressure sintering, and the influence of target quality on film properties was studied. The AZO films sintered at 1200 鈩，

本文编号：1618334