硼酸钇和氧化钨铕离子掺杂薄膜的电沉积制备及光电性能

发布时间：2018-03-24 02:34

  本文选题：YBO_3:Eu~(3+)　切入点：Y_3BO_6:Eu~(3+)　出处：《浙江大学》2015年硕士论文

【摘要】：能源紧缺和环境污染是制约社会发展和提高人类生活质量的瓶颈,因此发展节能器件和清洁能源具有迫切而重大的需求。太阳能是取之不尽,用之不竭的清洁能源。稀土发光材料和半导体材料是人们利用太阳能的主要载体,研究这类光电材料引起了研究人员很大的兴趣。材料的光电性能往往受材料的体相和界面结构的影响,因此,发展合适的方法研究材料的结构对其光电性能的影响具有重要的科学意义。另外,发展简单便宜的方法制备高质量的薄膜是材料器件化应用的关键。本论文以具有丰富结构的硼酸盐和具有紫外一可见光吸收的WO3为研究对象,以Eu3+作为发光源和结构探针,发展简单、廉价及易放大化的电沉积方法制备了Eu3+离子掺杂和修饰的硼酸盐和WO3薄膜,探讨了制备条件对薄膜的组成、结构及光电化学性能的影响,初步研究了光电性能增强的可能机理。本论文的内容分为以下两个部分： (1)电沉积制备YBO3:Eu3+和Y3BO6:Eu3+薄膜及其发光性能。在含B3+、Y3+、Eu3+离子的溶液体系中,改变沉积电位,分别得到了YBO3:Eu3+和Y3BO6:Eu3+薄膜。通过IR、XRD.SEM及荧光发光等方法对两种硼酸盐进行了表征,探讨了其形成过程的机理和铕离子掺杂对其发光性能的影响。荧光发射光谱表明,Y3BO6:Eu3+薄膜的5D0→7F2跃迁比5D0→7F1跃迁强,即红橙比较大,这与Y3B06晶体结构的不对称性相一致。Y3BO6:Eu3+(5mol%)在591nm处的最长荧光寿命为2.24ms,而YBO3:Eu3+(1mol%)的最长荧光寿命为3.78ms。 (2) WO3/Eu2(WO4)3复合薄膜的制备及其光电化学性能。在电沉积制备的W03薄膜表面上掺杂少量的Eu3+离子,煅烧后得到复合薄膜电极。XRD、SEM、EDS测试发现铕掺杂前后薄膜的晶体结构和形貌发生了变化。Eu3+离子以Eu2(WO4)3形式覆盖在WO3电极表面。光电化学测试表明,当Eu2(WO4)3层厚度为13nm时,WO3/Eu2(WO4)3复合电极的光电氧化水的性能最好,其光生电流密度是纯W03薄膜的6.5倍,入射光电转换效率(IPCE)和吸收光电转换效率(APCE)分别是纯W03薄膜的5.5倍和5.3倍。
[Abstract]:Energy shortage and environmental pollution are the bottleneck of restricting the development of society and improving the quality of human life. Therefore, the development of energy-saving devices and clean energy has an urgent and important need. Rare-earth luminescent materials and semiconductor materials are the main carriers of solar energy. The study of such optoelectronic materials is of great interest to researchers. The optoelectronic properties of materials are often affected by the bulk and interface structure of the materials, so, It is of great scientific significance to develop appropriate methods to study the effects of the structure of materials on their photoelectric properties. The development of simple and inexpensive methods for the preparation of high quality thin films is the key to the application of devices. In this thesis, the borate with rich structure and WO3 with UV-Vis absorption are studied, and Eu3 is used as the light source and structural probe. Borate and WO3 films doped and modified with Eu3 ions were prepared by a simple, inexpensive and scalable electrodeposition method. The effects of preparation conditions on the composition, structure and photochemical properties of the films were discussed. The possible mechanism of optoelectronic performance enhancement is preliminarily studied. The content of this thesis is divided into the following two parts:. YBO3:Eu3 and Y3BO6:Eu3 thin films were prepared by electrodeposition and their luminescence properties. The YBO3:Eu3 and Y3BO6:Eu3 thin films were obtained by changing the deposition potential in the solution system containing B _ 3O _ 3Y _ 3 EU _ 3 ion. The two borates were characterized by IR XRD.SEM and fluorescence luminescence. The mechanism of its formation and the effect of EU ~ (3 +) doping on its luminescence properties were discussed. The fluorescence emission spectra show that the 5D0 of Y3BO6: EU3 thin films. 鈫，

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