烧结工艺对电容式高温压力传感器用氧化铝陶瓷基片的影响

发布时间：2018-03-31 08:37

  本文选题：氧化铝陶瓷　切入点：基片　出处：《中国陶瓷》2017年07期

【摘要】：为了研究不同烧结工艺对电容式高温压力传感器用氧化铝陶瓷基片的影响,以纳米α-Al_2O_3为主要原料,加入ZrO_2、MgO和Y_2O_3等粉料作为烧结助剂,采用流延成型、等静压成型和气氛保护无压烧结技术制备了氧化铝陶瓷基片。分别对试样的相对密度、抗弯强度、硬度及断裂韧性进行测试,并利用扫描电镜(SEM)观察其显微组织形貌。结果表明:陶瓷基片的烧结不宜接触O_2,因此在烧结过程中应选用流动高纯N_2对其进行气氛保护。为防止试样烧结后变形翘曲,基片在装载时应适度施加压盖,提高平整度。此陶瓷基片的理想烧结温度约为1550℃,对应试样的相对密度、抗弯强度、硬度及断裂韧性数值分别达到了98.8%、766 MPa、17.2 GPa及4.2 MPa·m~(1/2)。1550℃烧结试样显微组织呈现韧窝状,该结构有助于提高陶瓷基体的致密度及强韧化程度。
[Abstract]:In order to study the effect of different sintering processes on alumina ceramic substrates for capacitive high temperature pressure sensors, 伪 -Al _ 2O _ 3 nanocrystalline was used as the main raw material, and ZrO _ 2MgO and Y_2O_3 were added as sintering auxiliaries.Alumina ceramic substrates were prepared by isostatic pressing and atmospheres-protected pressureless sintering.The relative density, bending strength, hardness and fracture toughness of the samples were measured, and the microstructure and morphology of the samples were observed by scanning electron microscopy (SEM).The results show that the sintering of ceramic substrates is not suitable for contact with O _ 2s. Therefore, flow high-purity N _ (2) should be used to protect the ceramic substrates in atmosphere during the sintering process.In order to prevent the specimen from warping after sintering, the substrate should be loaded with a proper pressure cover to improve the flatness.The ideal sintering temperature of the ceramic substrate is about 1550 鈩，

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