氧化镓纳米材料的制备及结构表征

发布时间：2018-04-05 11:12

  本文选题：热蒸发　切入点：结构表征　出处：《山东师范大学》2015年硕士论文

【摘要】：伴随社会的进步和科技的发展，以半导体纳米结构研究作为焦点的低维纳米材料的研究变成了一个热点问题,半导体材料受量子尺寸效应、小尺寸效应、表面效应、量子隧道效应、体积效应等特性的影响，表现出奇特的介观物理特性，通过各种纳米材料的特殊性质,科学家们在各个领域取得了巨大的突破,它还可以促进纳米材料的应用越来越广泛,伴随着纳米材料技术的发展，纳米材料对人们的影响也已经涉及到方方面面，例如太阳能电池、透明导电电极、气敏传感器、晶体管等，目前，国内外对于纳米材料的研究主要集中在两个方面，一是如何运用简单而行之有效的方法制备低维纳米材料，二是对低维纳米材料的基本特性，包括表面结构形貌、光学特性、输运特性等的测试表征。本文对Ga2O3粉末和Au覆盖的Si(111)基片加热不同时间,利用热蒸发法，通过控制不同退火时间和退火温度制备了不同的Ga2O3纳米结构，并用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、选区电子衍射（SAED）、X射线能谱仪（EDS）和X射线衍射(XRD)技术对样品进行了结构、形貌的表征。主要内容包括： （1）用简易的热蒸发方法，将Ga2O3粉末与石墨粉充分混合作为原料，以Au为催化剂，高纯N2为载气，在1150℃温度下生长不同的时间，，生长30min时在Au覆盖的Si(111)基片上得到了大量的直径在100nm-500nm范围的Ga2O3纳米线，而当原料加热到60min、90min、120min时，出现大量Ga2O3纳米棒结构，说明生长时间对样品的形态结构有一定的影响。TEM图像、XRD测试结果以及拉曼光谱显示样品为氧化镓。 （2）将Ga2O3粉末与石墨粉充分混合作为原料，以Au为催化剂，高纯N2为载气，用热蒸发法在1200℃生长不同时间制备了大量规律生长的Ga2O3纳米线结构，在这一温度下我们发现了一个核壳生长继而脱落的有趣现象。SEM显示,在整个样品表面形成大量直径约200-300nm的蒲公英状纳米线。能量色散谱(EDS)和拉曼光谱都显示，样品为纯净的Ga2O3。最后,简要讨论了这种奇特纳米结构的生长机制。 （3）以金做催化剂，在1300℃通过热蒸发Ga2O3粉末与石墨粉混合物加热不同时间，在15min到45min制备了直径为150nm-250nm，长达数百微米的Ga2O3纳米线，而当加热到60min以后，出现明显的纳米管结构，进一步说明了生长时间对样品形态结构的影响。最后，讨论了氧化镓纳米管的生长机制。
[Abstract]:With the progress of society and the development of science and technology, the research of low-dimensional nanomaterials focused on semiconductor nanostructures has become a hot issue. Semiconductor materials are affected by quantum size effect, small size effect, surface effect.The effects of quantum tunneling effect, volume effect and other properties show peculiar mesoscopic physical properties. Through the special properties of various nanomaterials, scientists have made great breakthroughs in various fields.It can also promote the application of nanomaterials more and more widely. With the development of nanomaterials technology, the impact of nanomaterials on people has been involved in many aspects, such as solar cells, transparent conductive electrodes, gas sensors,At present, the research on nanomaterials at home and abroad is mainly focused on two aspects: one is how to use simple and effective methods to prepare low-dimensional nanomaterials, the other is the basic characteristics of low-dimensional nanomaterials.Including the surface morphology, optical properties, transport characteristics and so on.In this paper, different Ga2O3 nanostructures were prepared by controlling different annealing time and annealing temperature by means of thermal evaporation method for heating Ga2O3 powder and au covered SiN111) substrate.The structure and morphology of the samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAEDX) and X-ray diffraction (XRD) techniques.The main elements include:1) by a simple method of thermal evaporation, Ga2O3 powder and graphite powder were mixed as raw materials, au as catalyst and high purity N2 as carrier gas for different time at 1150 鈩

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