基于n型硫化铟纳米线的光电子器件性能研究

发布时间：2018-04-13 21:52

本文选题：硫化铟纳米线 + 场效应晶体管　；参考：《华中科技大学》2015年硕士论文

【摘要】：近年来,随着纳米技术不断发展,一维半导体纳米材料因其独特的形貌结构以及光电子学性能,引起了广泛关注,大量基于一维纳米结构材料的电子、光电子器件的研究不断涌现。硫化铟作为III-VI族半导体材料中的重要一员,同样受到了广泛的关注。在本文中,我们合成了具有高的晶体质量的β-In2S3一维纳米线材料,并首先将其应用于场效应晶体管,然后重点研究了其在硬质硅基衬底以及柔性衬底上的光电探测器的应用。主要内容如下:(1)通过化学气相沉积合成了具有高的晶体质量的β-In2S3一维纳米线材料,它的禁带宽度为2.28 eV,可以作为可见光范围的光电探测材料。(2)在Si/SiO2衬底上,制作了基于单根In2S3纳米线的场效应晶体管和光电探测器件。晶体管测试验证了In2S3纳米线为n型半导体,并在一定条件下得到了晶体管器件的载流子浓度为8.975×1016 cm-3,载流子迁移率为2.35×10-2 cm2V-1s-1。光电探测器性能测试表明该器件在300~600 nm光谱范围内有良好的响应,且在一定条件下,In2S3纳米线光电探测器的光谱响应率、外量子效率以及比探测率为分别达到6.8×105A/W、2.01×108%以及1.62×1014 Jones。(3)在柔性衬底上,制作了基于单根In2S3纳米线的光电探测器,重点研究了In2S3纳米线在柔性光电探测方面的应用潜力。在与硅基器件相同条件下,其光谱响应率为7.35×104 A/W,外量子效率为2.28×107%,比探测率为2.4×1014 Jones。此外,柔性器件的开关比高达106,光电响应时间小于10 ms。柔性性质测试中,在不同弯折角度以及弯折次数下,该柔性器件仍保持了与弯折前基本一致的性质,并在长时间放置后没有出现性能衰减,表现了很好的稳定性。这一系列测试证明了In2S3纳米线在高性能柔性光电探测方面具有巨大的应用前景。
[Abstract]:In recent years, with the development of nanotechnology, one-dimensional semiconductor nanomaterials have attracted extensive attention because of their unique morphology and optoelectronic properties.The research of optoelectronic devices is constantly emerging.As an important member of III-VI group semiconductor materials, indium sulfide has also received extensive attention.In this paper, we have synthesized 尾 -in _ 2S _ 3 -nanowires with high crystal quality and applied them to field effect transistors first, and then we have focused on the application of photodetectors on hard silicon-based substrates and flexible substrates.The main contents are as follows: (1) 尾 -In2S3-nanowire material with high crystal quality has been synthesized by chemical vapor deposition. Its bandgap is 2.28eV, which can be used as photoelectric detection material in visible range.Field effect transistors and photodetectors based on single In2S3 nanowires have been fabricated.The transistor tests show that the In2S3 nanowires are n-type semiconductors. Under certain conditions, the carrier concentration of the transistors is 8.975 脳 1016 cm ~ (-3) and the carrier mobility is 2.35 脳 10 ~ (-2) cm ~ (-2) V-1s-1.The performance test of the photodetector shows that the device has a good response in the range of 600nm and the spectral responsivity of the photodetector with In2S3 nanowires under certain conditions.A photodetector based on a single In2S3 nanowire was fabricated on a flexible substrate with an external quantum efficiency and a specific detectivity of 6.8 脳 10 5A / W 2.01 脳 10 8% and 1. 62 脳 1014 Jones.3 respectively. The application potential of the In2S3 nanowires in flexible photoelectric detection was emphatically studied.The spectral responsivity is 7.35 脳 10 ~ 4 A / W, the external quantum efficiency is 2.28 脳 10 ~ 7 and the specific detectivity is 2.4 脳 1014 Jones.In addition, the switching ratio of flexible devices is as high as 106, and the photoelectric response time is less than 10 Ms.In the test of flexible properties, under different bending angles and bending times, the flexible device still keeps the same property as that before bending, and has no performance attenuation after a long period of time, so it shows good stability.This series of tests prove that In2S3 nanowires have great application prospect in high performance flexible photoelectric detection.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ133.53;TB383.1

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