氧化铟材料的形貌可控制备及其乙醇气敏性能研究

发布时间：2018-04-26 22:06

本文选题：氧化铟 + 气敏性能　；参考：《哈尔滨工业大学》2015年博士论文

【摘要】：半导体金属氧化物氧化铟(In_2O_3)是一种重要的多功能材料,因其优异的物理和化学性能被广泛地应用于太阳能电池、透明电极、光电传感器、防静电涂料以及气体传感器。作为气体敏感材料,其敏感特性强烈地依赖于气敏材料的尺寸和结构等因素,例如颗粒尺寸、表面氧空位缺陷、暴露晶面、比表面积、维数、网络和孔隙率以及掺杂剂。本论文先通过水热法可控制备不同形貌的In(OH)_3纳米粒子、立方体、十八面体等前驱体,再经过煅烧获得相应形貌的In_2O_3气敏材料,较系统地研究In_2O_3气体敏感材料的晶体颗粒大小、暴露{100}和{110}不同晶面的In和O原子的不同排列方式对材料表面氧空位形成的影响,并讨论氧空位和暴露晶面对气敏性能的影响,本论文主要研究内容如下:对于In_2O_3纳米粒子,研究粒径大小对气体传感器灵敏度、响应/恢复时间、稳定性的影响。以In Cl3·4H2O为In源,通过氨水和盐酸调整反应溶液的p H值为7、9、11,采用水热法可控制备不同粒径大小In(OH)_3纳米颗粒前驱体,并通过煅烧获得相应的In_2O_3气敏材料。研究以不同粒径大小的In_2O_3纳米颗粒制作的气体传感器的气敏性能,深入探讨粒径大小对传感器的材料表面氧空位含量、气敏性能的影响,并揭示其与气敏性能的关系。重点讨论材料粒径大小与表面氧空位数量的关系以及不同粒径大小In_2O_3纳米粒子产生不同灵敏度的敏感机理。对于In_2O_3立方体,研究在粒径大小基本相同且暴露相同{100}晶面的情况下,影响气敏性能的主要因素。采用不同的碱源四乙基氢氧化铵、四甲基氢氧化铵、尿素,以In Cl3·4H2O为In原料,水热可控合成大小相当而且暴露相同{100}晶面的In(OH)_3立方体前驱体,通过煅烧获得相应的In_2O_3立方体气敏材料。以其为研究模型,排除颗粒大小以及暴露晶面对气敏性能影响,研究不同碱源制备的立方体材料的表面氧空位缺陷结构对气敏性能的影响。根据材料的晶体结构,分析了{100}晶面次外层的氧空位的含量对气敏性能的影响,并进一步获得材料的表面氧空位缺陷与气敏性能的关系。揭示不同碱源对材料次外层氧空位生成以及气敏性能的影响,并对{100}晶面的In和O原子排列方式、次外层氧空位的形成以及敏感机理进行探讨。对于In_2O_3十八面体,研究暴露{110}高能晶面对气敏性能的影响。采用水热法,以In Cl3·4H2O为原料,通过调整碱源Na OH的用量以及反应介质中无水乙醇与去离子水的体积比可控合成暴露{100}和{110}晶面的In(OH)_3十八面体前驱体。详细研究碱源Na OH的用量、反应介质中无水乙醇与去离子水不同体积比对In(OH)_3十八面体形成的影响,并根据时间演变实验提出可能的生长机理。通过高温煅烧获得相应形貌的暴露{100}和{110}晶面In_2O_3十八面体气敏材料。通过材料晶面分析,研究不同暴露晶面的氧空位对气敏性能的影响,进一步探讨暴露高能面,氧空位的数量与气敏性能的关系。着重研究暴露{100}与{110}不同晶面上的In和O原子排列顺序不同的晶体结构对产生氧空位的影响,建立暴露晶面与材料结构及敏感特性之间的关系。
[Abstract]:The semiconductor metal oxide indium oxide (In_2O_3) is an important multifunctional material. Because of its excellent physical and chemical properties, it is widely used in solar cells, transparent electrodes, photoelectric sensors, antistatic coatings and gas sensors. As gas sensitive materials, their sensitive properties are strongly dependent on the size and size of gas sensitive materials. Structure and other factors, such as particle size, surface oxygen vacancy defect, exposed surface, specific surface area, dimension, network and porosity, and dopant. In this paper, In (OH) _3 nanoparticles, cubes, eighteen facets, and other precursors of different morphologies were prepared by hydrothermal method, and then the corresponding In_2O_3 gas sensitive materials were obtained by calcining, and the system was compared with the system. The effects of the size of crystal particles on In_2O_3 gas sensitive materials and the effects of different arrangements of In and O atoms on the surface oxygen vacancy formation on the surface of {100} and {110} surfaces and the effects of oxygen vacancies and exposed crystals on the gas sensitivity are discussed. The main contents of this paper are as follows: for In_2O_3 nanoparticles, the size of particle size is studied. The sensitivity of the gas sensor, the response / recovery time, the influence of the stability, the P H value of the reaction solution with In Cl3 / 4H2O as the In source and the P H value of the reaction solution by ammonia and hydrochloric acid are 7,9,11, and the precursor of In (OH) _3 nanoparticles with different particle sizes can be prepared by hydrothermal method, and the corresponding In_2O_3 gas sensitive materials are obtained by calcination. The gas sensing properties of gas sensors made by small In_2O_3 nanoparticles are discussed. The effect of particle size on the oxygen vacancy content and gas sensing properties of the material on the sensor is discussed, and the relationship between the gas sensing properties and the gas sensing properties is revealed. The relationship between the size of the material and the number of oxygen vacancies on the surface and the size of In_2O_3 nanoparticles with different particle sizes are discussed. The sensitive mechanism of different sensitivities is produced. For In_2O_3 cubes, the main factors affecting the gas sensing properties are studied in the case of the same particle size and the exposure of the same {100} crystal surface. Different alkali sources, four ethyl ammonium hydroxide, four methyl ammonium hydroxide, urea, and In Cl3. 4H2O as In materials, are used as raw materials for hydrothermal synthesis. The In (OH) _3 cube precursor with the same {100} crystal surface was exposed, and the corresponding In_2O_3 cube gas sensitive material was obtained by calcining. The effect of the particle size and the exposure crystal on the gas sensing properties was eliminated. The effect of the oxygen vacancy defect structure on the surface of the cube material prepared by different base sources on the gas sensitivity was investigated. The effect of oxygen vacancy content on the gas sensing properties of {100} surface layer is analyzed, and the relationship between oxygen vacancy and gas sensitivity is further obtained. The influence of different alkali sources on the formation of oxygen vacancy and gas sensitivity in the secondary layer of materials is revealed, and the arrangement of In and O atoms on the {100} surface is also revealed. The formation of layer oxygen vacancy and the sensitive mechanism are discussed. For In_2O_3 eighteen face, the effect of exposure of {110} Gao Nengjing on gas sensitivity is studied. Using hydrothermal method, In Cl3. 4H2O is used as raw material to synthesize {100} and {110} crystal by adjusting the amount of Na OH in the alkaline source and the volume ratio of anhydrous ethanol and off water in the reaction medium. The In (OH) _3 eighteen facet precursor. The effects of the amount of Na OH on the alkali source and the different volume ratio of ethanol and deionized water in the reaction medium on the formation of In (OH) _3 eighteen face were studied in detail, and the possible growth mechanism was proposed according to the time evolution experiment. The corresponding morphology of the exposed {100} and {110} In_2O_3 eighteen was obtained by high temperature calcination. The effect of oxygen vacancy on the gas sensitivity of different exposed surfaces is studied through the analysis of material surface. The relationship between the number of exposed high energy surface, the number of oxygen vacancies and the gas sensitivity is further explored. The effect of the different crystal structures of In and O atoms arranged on the different crystal surfaces of {100} and {110} to produce oxygen vacancies is studied. The relationship between the exposed surface and material structure and sensitivity is established.

【学位授予单位】：哈尔滨工业大学
【学位级别】：博士
【学位授予年份】：2015
【分类号】：TQ133.53

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