晶硅切割废砂浆的提纯及在SiC陶瓷中的应用

发布时间：2018-04-27 19:59

  本文选题：晶硅切割废砂浆 + 真空碳化　； 参考：《海南大学》2015年硕士论文

【摘要】：光伏产业晶硅切割废砂浆的传统回收工艺复杂且高纯硅的分离难度大、回收率低。而将废料提纯后直接制备SiC及其复合材料不仅方法简单、有效避开了硅难于分离的问题,且废料利用充分、制品多样化。 本文以光伏产业晶硅切割废砂浆为主要原料,在通过物理和化学方法测定其组分含量的基础上,确定了Si/C配比。利用真空碳化法制备了SiC粉末。探究了真空热处理温度、无机碳源种类、除碳处理等因素对产物粉末的物相组成、微观组织及粒径分布的影响。研究表明,在900-1100℃温度范围,随着反应温度的升高,Si粉与活性炭的碳化反应越来越完全,并在1100℃完全生成了SiC粉末。继续升温,X射线衍射峰的强度逐渐增高,SiC产物粉末的粒度越来越大。此外,不同碳源在相同条件的碳化反应结果表明,活性炭作为碳源比石墨效果更佳。 采用放电等离子烧结的方法制备了SiC陶瓷材料。探究了球磨时间、烧结温度以及烧结助剂等因素对SiC陶瓷密度、力学性能等的影响,并从放电等离子烧结过程、材料的物相组成、显微结构等方面对其进行分析。研究表明,球磨时间5h效果最佳,但引入的杂质会导致样品难以烧结。SiC在烧结过程中经历了膨胀、反应、再次膨胀、致密化、稳定等5个过程。Al2O3烧结助剂加入量10w%、温度1800℃是烧结SiC致密陶瓷材料的合理条件,该条件下制备的SiC陶瓷相对密度为95.18%,维氏硬度约为HV2100。
[Abstract]:The traditional recovery technology of silicon cut waste mortar in photovoltaic industry is complex, the separation of high purity silicon is difficult and the recovery rate is low. The method of preparing SiC and its composites directly after purification of waste materials is not only simple, but also avoids the problem that silicon is difficult to separate, and the waste materials are fully utilized and the products are diversified. In this paper, using silicon cut waste mortar in photovoltaic industry as the main raw material, the proportion of Si/C was determined on the basis of physical and chemical methods. SiC powder was prepared by vacuum carbonization. The effects of vacuum heat treatment temperature, inorganic carbon source type and carbon removal treatment on the phase composition, microstructure and particle size distribution of the powder were investigated. The results show that at 900-1100 鈩，

本文编号：1812108