超声波精细雾化施液抛光氮化硅陶瓷的实验研究

发布时间：2018-04-29 04:34

本文选题：氮化硅陶瓷 + 材料去除率　；参考：《江南大学》2017年硕士论文

【摘要】：随着新型陶瓷材料的不断发展,氮化硅陶瓷材料以其优良的性能在工业生产中得到越来越多的应用;但是这种陶瓷材料本身的硬度比较高,在对其表面进行超精密加工时,一般的表面加工技术容易在陶瓷材料的表面产生各种表面缺陷,很难获得高质量的加工表面,而化学机械抛光技术由于其加工过程的高效率、加工表面的高质量等优点,成为了对氮化硅陶瓷材料表面进行超精密加工的极佳方式。超声精细雾化施液抛光技术不仅能够实现传统化学机械抛光技术的优点,而且还能够减少加工成本,避免资源的浪费。本文采用超声波精细雾化施液抛光技术对氮化硅陶瓷基体进行超精密加工,对抛光液成分、雾化抛光过程中的工艺参数以及雾化抛光氮化硅陶瓷基体的材料去除机理进行了研究与分析,为工业生产中氮化硅陶瓷基体的超精密加工工艺奠定理论基础。(1)对本课题在试验过程中用到的雾化抛光系统进行了介绍研究,研究了抛光液中的单因素成分在抛光过程中对抛光效果的影响,以氮化硅陶瓷的材料去除率和抛光后基体的表面粗糙度为评价指标,通过单因素试验筛选出抛光液中各个成分因素对抛光氮化硅陶瓷基体结果影响的最优值。(2)对所用抛光液的磨料质量分数、氧化剂质量分数、pH值大小等成分参数利用正交试验进行了优化,分析了抛光液中各成分值的大小对雾化抛光氮化硅陶瓷材料抛光结果的影响以及雾化抛光过程中的材料去除机理。优化的抛光液成分组合是二氧化硅磨料的浓度为6 wt%,氧化剂双氧水的含量为1 wt%,pH值为7。(3)在其他工艺参数一定的情况下,分别研究了雾液流量、抛光压力和抛光盘转速等三个工艺参数在单因素的试验条件下对雾化抛光氮化硅陶瓷基体抛光效果的影响,利用正交试验对三个工艺参数组合进行了优化并得到雾化抛光效果最好的一组工艺参数组合,即当抛光压力10.5 psi,雾液流量12.5 ml/min,抛光盘转速80 r/min,雾化抛光氮化硅陶瓷基体的抛光效果最好。(4)在各种试验条件不变的情况下,用精细雾化化学机械抛光方法和传统的化学机械抛光方法分别对氮化硅陶瓷基体进行超精密加工,并对比两种抛光方法下的试验结果。结果表明,使用传统的化学机械抛光方法进行加工时的抛光速率略高于精细雾化抛光方法的抛光速率,且两种方法抛光后氮化硅陶瓷基体的表面质量相差不大,但是雾化抛光所用抛光液用量仅为传统抛光所用抛光液的1/8。
[Abstract]:With the development of new ceramic materials, silicon nitride ceramic materials have been used more and more in industrial production because of their excellent properties. General surface processing technology is easy to produce various surface defects on the surface of ceramic materials, and it is difficult to obtain high quality machined surfaces. However, chemical mechanical polishing technology has the advantages of high efficiency in machining process and high quality of machined surfaces. It has become an excellent way of ultra-precision machining of silicon nitride ceramic surface. Ultrasonic fine atomization polishing technology can not only realize the advantages of traditional chemical mechanical polishing technology, but also reduce the processing cost and avoid the waste of resources. In this paper, the ultra-precision machining of silicon nitride ceramic substrate was carried out by using ultrasonic fine atomization and liquid polishing technology. The process parameters and material removal mechanism of atomized polishing silicon nitride ceramic substrate were studied and analyzed. In this paper, the atomization polishing system used in the experiment is introduced and studied, which lays a theoretical foundation for the ultra-precision machining process of silicon nitride ceramic substrate in industrial production. The effect of single factor composition in polishing solution on polishing effect was studied. The material removal rate of silicon nitride ceramics and the surface roughness of polished matrix were used as the evaluation index. Through single factor test, the optimum value of the influence of each component factor in polishing solution on the results of polishing silicon nitride ceramic matrix was obtained. The mass fraction and pH value of oxidant were optimized by orthogonal test. The effect of the value of each component in the polishing liquid on the polishing results of silicon nitride ceramic materials and the material removal mechanism in the atomization polishing process were analyzed. The optimized composition of polishing liquid is that the concentration of silica abrasive is 6 wt, the content of oxidizer and hydrogen peroxide is 1 wtand the pH value is 7. 3) under the condition of certain other technological parameters, the flow rate of fog liquid is studied separately. The effect of three process parameters, such as polishing pressure and rotating speed of polishing disc, on the polishing effect of silicon nitride ceramic substrate was studied under the condition of single factor test. The combination of three process parameters was optimized by orthogonal test and a group of process parameters with the best effect of atomization polishing was obtained. That is, when the polishing pressure is 10.5 psii, the flow rate of the mist is 12.5 ml / min, the rotating speed of the diskette is 80 r / min, the polishing effect of atomized polishing silicon nitride ceramic substrate is the best. Ultraprecision machining of silicon nitride ceramic substrate was carried out by using fine atomization chemical mechanical polishing method and traditional chemical mechanical polishing method, and the experimental results under the two polishing methods were compared. The results show that the polishing rate of traditional chemical mechanical polishing method is slightly higher than that of fine atomization polishing method, and the surface quality of silicon nitride ceramic substrate after polishing by the two methods is not different. But the amount of polishing liquid used in atomization polishing is only 1 / 8 of that used in traditional polishing.
【学位授予单位】：江南大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ174.6

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