基于光辅助电化学的相干多孔硅制备工艺研究

发布时间：2018-05-28 01:07

  本文选题：光辅助电化学 + 相干多孔硅　； 参考：《长春理工大学》2017年硕士论文

【摘要】：相干多孔硅(Coherent Porous Silicon,CPS)是空间规则性排列的,孔径尺寸大小均匀有序的多孔硅阵列。背部形貌良好的高长径比相干多孔硅在硅微通道板、环路热管和微针等领域被广泛应用。本文针对相干多孔硅的制备实验展开研究,以n型硅为研究对象,自主设计搭建光电化学实验装置。研究过程中,采用不同的工艺参数进行光电化学实验,经过机械抛光处理后,用金相显微镜观察刻蚀后相干多孔硅的背部形貌,研究刻蚀电压、电解液温度、HF浓度、光照强度等工艺参数对相干多孔硅背部形貌的影响;同时研究通道尺寸与刻蚀电流密度之间的关系,在考虑电解液扩散限制和暗电流对孔径控制影响的情况下,根据实验数据拟合得到等径相干多孔硅刻蚀电流的控制曲线。研究表明:刻蚀电压为0.6V,电解液温度为23℃,HF浓度为5wt%,光照强度为85mW/cm2的实验条件下制备的相干多孔硅背部形貌良好;并在最优实验条件下,根据刻蚀电流控制曲线控制光照强度,制备出形貌良好的相干多孔硅阵列。
[Abstract]:Coherent porous silicon (Coherent Porous silicon) is a regularly spaced porous silicon array with uniform pore size and ordered size. High aspect ratio coherent porous silicon with good back shape is widely used in silicon microchannel plate, loop heat pipe and microneedle. In this paper, the preparation experiment of coherent porous silicon is studied. Taking n-type silicon as the research object, the photoelectric chemical experimental device is designed and built independently. In the course of the study, photochemical experiments were carried out with different process parameters. After mechanical polishing, the back morphology of coherent porous silicon after etching was observed by metallographic microscope, and the etching voltage, electrolyte temperature and HF concentration were studied. The influence of process parameters such as light intensity on the back morphology of coherent porous silicon and the relationship between channel size and etching current density are studied. The influence of electrolyte diffusion and dark current on pore size control is considered. According to the experimental data fitting, the control curve of etching current of equal-diameter coherent porous silicon is obtained. The experimental results show that the back morphology of the coherent porous silicon prepared under the conditions of etching voltage of 0.6 V, electrolyte temperature of 23 鈩，

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