金属催化SiC制备石墨烯的研究

发布时间：2018-05-30 00:44

  本文选题：石墨烯 + 原位　； 参考：《中国地质大学(北京)》2017年硕士论文

【摘要】：石墨烯具有原子尺寸的厚度和低剪切强度的层状结构、高的机械强度、低的表面能,同时具有良好的导热导电能力和苛刻环境下的化学稳定性,非常适宜作为微/纳器件的纳米润滑薄膜,提高深空探测中微纳米器件的可靠性。然而实际应用中高质量石墨烯的可控制备及转移石墨烯与基底之间结合力不足限制了石墨烯在微纳米接触部件中的应用。本文在具有催化金属的基底硬质合金和绝缘体Si片上,分别沉积SiC层及Co层和SiC层后退火,利用Co催化SiC薄膜原位生长石墨烯,研究了硬质合金表面沉积的SiC薄膜在不同工艺参数下对生长石墨烯的影响,分析了Co催化SiC中石墨烯生成及变化的反应机理;在Si片表面通过改变金属层和固态碳源,探究了金属层和固态碳源变化对石墨烯可控生长的影响。结果表明:(1)Co和SiC充分反应,随着Si元素含量减少,石墨烯析出层的物相结构发生变化,析出层呈CoSi化合物时,析出的碳原子难以形成石墨烯;由CoSi化合物向Co相的转变过程中,生成石墨烯的层数先减少后增加,但石墨烯中缺陷含量一直减少。(2)Co层变化对生成石墨烯有明显影响。Co层位于SiC薄膜表面时,在较短的退火时间下有利于石墨烯生成;Co层厚度增加,生成的石墨烯缺陷减少,质量增加;SiC薄膜表面Co层预退火,对生成石墨烯没有明显影响。(3)SiC结晶状态变化对石墨烯生成有明显影响。非晶SiC薄膜退火后成分更加均匀,生成石墨烯中质量提高,缺陷减少,结晶SiC结晶度提高,有利于提高生成石墨烯的质量;结晶SiC薄膜内C原子含量升高,有利于少层石墨烯的生成,同时生成石墨烯的质量提高;利用金刚石作为固态碳源,生成的石墨烯层数较多。
[Abstract]:Graphene has atomic thickness and low shear strength layered structure, high mechanical strength, low surface energy, good thermal conductivity and chemical stability in harsh environment. It is very suitable for nano-lubricating film of micro / nano devices to improve the reliability of micro-nano devices in deep space exploration. However, the controllable preparation of high quality graphene and the lack of transfer bond between graphene and substrate in practical application limit the application of graphene in micro and nano contact parts. In this paper, SiC layer, Co layer and SiC layer were deposited on the substrate cemented carbide and insulator Si wafer with catalytic metal, respectively. In situ growth of graphene was carried out on SiC film catalyzed by Co. The effect of different technological parameters on the growth of graphene from SiC films deposited on the surface of cemented carbide was studied, and the reaction mechanism of the formation and change of graphene in SiC catalyzed by Co was analyzed, and the metal layer and solid carbon source were changed on the surface of Si. The effects of metal layer and solid carbon source on the controlled growth of graphene were investigated. The results showed that the phase structure of graphene precipitated layer changed with the decrease of Si content. When the precipitated layer was CoSi compound, it was difficult for the carbon atoms to form graphene, and in the process of transition from CoSi compound to Co phase, The number of graphene layers decreased first and then increased, but the defect content of graphene decreased continuously. The change of the layer of Co has a significant effect on the formation of graphene. The layer is located on the surface of SiC film. Under the short annealing time, the thickness of the formed Co layer of graphene is increased, the defects of the formed graphene are reduced, and the quality of the Co layer on the surface of sic thin film is increased, and the Co layer on the surface of sic film is preannealed. There is no obvious effect on the formation of graphene. The change of crystalline state of sic has obvious influence on the formation of graphene. After annealing, the composition of amorphous SiC films is more uniform, the quality of graphene is increased, the defects are reduced, the crystallinity of crystalline SiC is increased, and the quality of graphene is improved. The formation of graphene is beneficial to the formation of less layer graphene and the quality of the formation of graphene is improved, and diamond is used as the solid carbon source to produce more graphene layers.
【学位授予单位】：中国地质大学(北京)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ127.11
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本文编号：1953184