SiC低维纳米结构光电探测器件研制及其性能研究

发布时间：2018-06-18 04:34

  本文选题：气相沉积 + SiC　； 参考：《太原理工大学》2015年硕士论文

【摘要】：SiC是第三代半导体材料，，具有禁带宽度大、热导率高、电子饱和漂移速度高、临界击穿场强高、本征载流子浓度低、抗辐照能力强、化学稳定性好等优异物理特性，且与当前成熟的硅基平面工艺相兼容，是研发高温、高频、耐高压、抗辐照，大功率等电子器件的理想材料，在用作苛刻工作条件下的光催化剂，气敏检测器、显示器、气敏传感器和导弹尾焰探测装置等领域具有重要应用前景。SiC低维纳米结构不仅保留了其块体结构的优异性能，还兼具低维纳米结构的独特优势，有望为新颖高效的微电子器件研发带来契机。 本论文以化学气相沉积法制备SiC单晶纳米线，通过工艺参数的探索和优化，实现高品质SiC单晶纳米线的制备。在器件设计和组装上，通过光刻和电子束沉积技术，实现单根SiC纳米线光电探测器的研制；通过溶液组装方法，实现了SiC单晶纳米线薄膜光电探测器的研制，通过介电泳力自组装技术，实现了基于Si/SiO2和柔性基底上的SiC有序纳米线阵列光电探测器研制。研究结果表明，所研制的光电探测器具有高灵敏、快响应、可重复性高等系列特点。综合本论文工作，其主要结果如下： (1)以稻米壳烧灼后的白粉、碳纤维为原料，通过化学气相沉积，成功地制备了高质量的3C-SiC单晶纳米线。其结构表征分析结果表明，所制备的SiC纳米线为单晶，为立方相结构。 (2)所研制的单根SiC光电探测器具有良好的性能：快速的上升和下降光响应时间，分别为0.2s和0.09s；较高的光谱响应度(Ri)和外量子效率(EQE)，在5.0V偏压和420nm蓝光光照下，其Ri和EQE分别为3.3106A/W和9.7108%，表明所研制的器件具有良好的灵敏度。实验证明，所研制的光电探测器，能够胜任200℃的高温服役条件。 (3) SiC单晶纳米线薄膜光电探测器对于420nm光照下光响应十分灵敏，具有优异的可重复性和稳定性，光生电流和光功率密度为近线性关系。 (4)与基于单根SiC纳米线的光电探测器相比，基于Si/SiO2和柔性基底上的SiC有序纳米线阵列的光电探测器性能得到显著增强；基于柔性基底上的SiC有序纳米线阵列光电探测器具有良好的机械柔韧性和电学稳定性，与基于Si/SiO2基底上的SiC有序纳米线阵列的光电探测器相比，其光、暗电流有所增加，可能是纳米线和柔性基底的接触较差所致。
[Abstract]:Sic is the third generation semiconductor material. It has many excellent physical properties, such as wide band gap, high thermal conductivity, high electron saturation drift velocity, high critical breakdown field strength, low intrinsic carrier concentration, strong radiation resistance and good chemical stability. Compatible with the current mature silicon based planar process, it is an ideal material for the development of high temperature, high frequency, high pressure, radiation resistant, high power and other electronic devices. It can be used as photocatalyst, gas detector and monitor under harsh working conditions. Gas sensors and missile tail flame detection devices have important application prospects. Sic low dimensional nanostructures not only retain the excellent properties of bulk structures, but also have the unique advantages of low dimensional nanostructures. It is expected to bring opportunities for the development of novel and efficient microelectronic devices. In this paper, sic single crystal nanowires were prepared by chemical vapor deposition. The preparation of high quality sic single crystal nanowires was realized by exploring and optimizing the process parameters. In device design and assembly, single sic nanowire photodetector is developed by photolithography and electron beam deposition, and sic single crystal nanowire film photodetector is developed by solution assembly method. Sic ordered nanowire array photodetectors based on Si / Sio _ 2 and flexible substrate were fabricated by self-assembly of dielectric electrophoresis force. The results show that the photodetector has the characteristics of high sensitivity, fast response and high repeatability. The main results are as follows: (1) High quality 3C-SiC single crystal nanowires were successfully prepared by chemical vapor deposition from white powder and carbon fiber from rice shell. The results of structure characterization show that the sic nanowires are single crystal and cubic phase structure. The single sic photodetector has good properties: fast rising and decreasing light response time are 0.2s and 0.09s, respectively. Under 5.0V bias voltage and 420nm blue light, the Ri and EQE are 3.3106A / W and 9.7108respectively, which show that the device has good sensitivity. The experimental results show that the photodetector is capable of serving at 200 鈩

本文编号：2034107