硫化氢气体吸附对氧化钨纳米线电学性能调控研究

发布时间：2018-08-11 09:39

【摘要】：现代科技的核心力量便是纳米科技。一维纳米材料因其独特的结构和优异的物理化学性质,成为构筑纳米元器件的理想材料。在众多纳米材料中,WO3因其在电致色变、气敏传感器、阻变存储器和超导方面有着显著的特性,受到广泛的关注与研究。本文在室温下测试了多种氛围对WO3纳米线电学性能的影响,对WO3纳米线表现出的忆阻效应进行了深入研究。通过多次实验,我们发现WO3纳米线所表现出的忆阻性能是可以被调控的。主要研究结果如下:1、本文使用的WO3纳米线,是通过水热法得到的单分散性好的纳米线。我们对所制备的WO3纳米线进行了表征(包括XRD,SEM,EDS等),并利用深紫外光刻微加工技术将其构建成一维纳米器件。2、室温下,我们在空气和真空环境中通过不同电压对WO3纳米器件进行循环伏安法测试,发现其为双端欧姆接触,并在大电压下表现出良好的忆阻效应。实验中通过恒压加脉冲的测试方法更直观地观察到了忆阻特性。3、在室温下测试了WO3一维纳米器件在H2S气氛中以及大气中的电学性能。发现在H2S气氛下WO3纳米器件电导有所增加,忆阻性能减弱。与此同时,做了同族元素化合物H2O气氛下(即不同湿度下)的对比实验。发现在H2O的影响下WO3纳米器件电导减小,忆阻性能减弱。4、本文还通过改变测试条件实现了对WO3纳米线器件忆阻性能的控制,不仅能改变忆阻特性大小,还能将WO3纳米线的忆阻特性进行反转,即将原I-V曲线表现为上相交的“8”字形改变为下相交的“8”字形。我们希望在后续的研究中能够针对WO3纳米线对气体的吸附作用做更多的研究,同时希望在WO3纳米线忆阻效应上实现精确的控制。
[Abstract]:The core force of modern science and technology is nanotechnology. Due to its unique structure and excellent physical and chemical properties, one-dimensional nanomaterials have become the ideal materials for the fabrication of nano-components. WO _ 3 has attracted extensive attention for its remarkable properties in electrochromic, gas sensitive sensors, resistive memory and superconducting materials. The effects of various atmosphere on the electrical properties of WO3 nanowires were measured at room temperature, and the memory effect of WO3 nanowires was studied. Through many experiments, we found that the amnesia performance of WO3 nanowires can be regulated. The main results are as follows: 1. The WO3 nanowires used in this paper are monodisperse nanowires obtained by hydrothermal method. We characterized the WO3 nanowires (including XRDX SEMN EDS, etc.) and fabricated them into one-dimensional nanowires at room temperature by deep UV lithography. The cyclic voltammetry of WO3 nanodevices under different voltages in air and vacuum environment shows that it is a two-terminal ohmic contact and exhibits a good memory effect at high voltage. The electrical properties of WO3 one-dimensional nanodevices in H _ 2S atmosphere and atmosphere were measured at room temperature by the method of constant voltage and pulse. It is found that in H _ 2S atmosphere, the conductivity of WO3 nanodevices increases and the amnesia performance weakens. At the same time, a comparative experiment was carried out in the atmosphere of homologous element compound H _ 2O (i.e. under different humidity). It is found that under the influence of H2O, the electrical conductivity of WO3 nanowires is reduced, and the amnesia performance of WO3 nanowire devices is weakened .4. this paper also realizes the control of WO3 nanowire devices by changing the test conditions, which can not only change the magnitude of amnesia characteristics, but also improve the performance of WO3 nanowire devices. The memory characteristics of WO3 nanowires can also be reversed, that is to say, the original I-V curve is changed from the "8" shape of the upper intersection to the "8" shape of the lower intersection. We hope that we can do more research on the adsorption of WO3 nanowires to gas in the following research, and we hope to control the recall effect of WO3 nanowires accurately.
【学位授予单位】：湖南师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ136.13;TB383.1

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