溶胶凝胶抛光膜加工单晶金刚石的实验研究
发布时间：2018-08-11 20:42
【摘要】：单晶金刚石所具有的高硬度、高禁带宽度、高热导率以及耐化学腐蚀等性质使得金刚石作为半导体材料在机械、光电等领域的应用处于重要地位。同时这些稳定的特性对单晶金刚石的高效超光滑加工带来一定的阻碍。本课题在现有的研究基础上,提出采用SG抛光膜加工单晶金刚石,研究单晶金刚石(100)和(111)晶面的加工工艺和材料去除机理。并通过反应精抛光方式,对比其加工效果和作用机制,提高加工效率和改善表面质量,达到低损伤的加工效果。本文首先采用SG抛光膜抛光单晶金刚石(100)和(111)晶面,对于(100)晶面需要采用低压温和的加工方式可获得较好的表面质量,(111)晶面在低加工压力下表面粗糙度值可获得1.088nm,局部表面粗糙度可达0.70nm。同时通过加工表面生成物和磨屑的物相研究金刚石(100)和(111)晶面粗加工阶段的材料去除机理,此时磨粒对加工表面机械作用主要是微破碎去除,其中(100)晶面为机械塑性刻划和挤压去除,(111)晶面为崩脆解理去除,物理方式去除的同时伴随着相变去除,主要转化为非晶碳和石墨。本文基于SG抛光膜加工的基础上添加混合磨料和化学试剂,对比研究(100)晶面在MP(机械抛光)、MCP(机械化学抛光)和CMP(化学机械抛光)三种不同加工方式下的作用效果和作用机制,提高金刚石精加工阶段表面质量,为反应抛光去除机理提供理论依据。通过划痕的形态和成因验证(100)晶面的磨粒机械作用去除机制。对比三种加工方式的加工效果,机械化学抛光可有效提高加工效率,材料去除率为25.5nm/min,明显优于其它两种加工结果,在机械作用诱导下金刚石表面材料与碳化硅磨料发生固相反应,有效促进金刚石发生非晶化和石墨化相变去除;化学机械抛光有利于在金刚石表面裂纹处产生腐蚀作用去除。本文研究了金刚石在MP、MCP和CMP精抛后(100)晶面的亚表面损伤形式和损伤尺度。损伤形式主要为非晶化、位错和晶格畸变,损伤尺度在2.0-3.3nm之间,相比其它加工方式,机械化学抛光方式形成的亚表面损伤尺度较大,约为3.3nm,与其较大材料去除率相匹配。
[Abstract]:Because of its high hardness, high band gap, high thermal conductivity and chemical corrosion resistance, single crystal diamond plays an important role in the applications of semiconductor materials in mechanical, optoelectronic and other fields. At the same time, these stable characteristics of single crystal diamond high-efficiency super-smooth processing has brought some obstacles. On the basis of the existing research, the processing technology and material removal mechanism of single crystal diamond (100) and (111) crystal face were studied by using SG polishing film to process single crystal diamond. The processing efficiency and surface quality can be improved by comparing the machining effect and the working mechanism through the reactive polishing method to achieve the low damage machining effect. In this paper, the single crystal diamond (100) and (111) faces were polished with SG polishing film. For the (100) crystal surface, the surface quality can be obtained by using low pressure and mild processing. The surface roughness value of (111) crystal plane can be 1.088 nm at low processing pressure, and the local surface roughness can reach 0.70 nm. At the same time, the material removal mechanism of diamond (100) and (111) crystal surface in rough machining stage was studied by the material phase of the surface product and debris. At this time, the mechanical action of abrasive particles on the machined surface was mainly micro-crushing removal. The (100) crystal plane is mechanoplastic and extruded. (111) the crystal plane is the cleavage of collapse and embrittlement. The physical removal is accompanied by phase transition, which is mainly converted to amorphous carbon and graphite. In this paper, based on the processing of SG polishing film, the effect and mechanism of (100) crystal surface in three different processing modes of MP (mechanical chemical polishing) and CMP (chemical mechanical polishing) were studied by adding mixed abrasives and chemical reagents. To improve the surface quality of diamond finishing stage and to provide theoretical basis for the removal mechanism of reactive polishing. The mechanism of mechanical removal of (100) grain surface was verified by scratch morphology and origin. Compared with the three processing methods, mechanochemical polishing can effectively improve the processing efficiency. The material removal rate is 25.5 nm / min, which is obviously superior to the other two processing results. The solid phase reaction between diamond surface material and silicon carbide abrasive induced by mechanical action can effectively promote the removal of amorphous and graphitized phase transition of diamond and the chemical mechanical polishing is conducive to the removal of corrosion at the crack of diamond surface. In this paper, the subsurface damage forms and damage scales of diamond on the (100) crystal plane of MCP and CMP have been studied. The damage forms are mainly amorphous, dislocation and lattice distortion, and the damage scale is between 2.0-3.3nm. Compared with other machining methods, the damage scale of mechanochemical polishing is about 3.3 nm, which is consistent with the larger material removal rate.
【学位授予单位】：华侨大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ163
本文编号：2178183
[Abstract]:Because of its high hardness, high band gap, high thermal conductivity and chemical corrosion resistance, single crystal diamond plays an important role in the applications of semiconductor materials in mechanical, optoelectronic and other fields. At the same time, these stable characteristics of single crystal diamond high-efficiency super-smooth processing has brought some obstacles. On the basis of the existing research, the processing technology and material removal mechanism of single crystal diamond (100) and (111) crystal face were studied by using SG polishing film to process single crystal diamond. The processing efficiency and surface quality can be improved by comparing the machining effect and the working mechanism through the reactive polishing method to achieve the low damage machining effect. In this paper, the single crystal diamond (100) and (111) faces were polished with SG polishing film. For the (100) crystal surface, the surface quality can be obtained by using low pressure and mild processing. The surface roughness value of (111) crystal plane can be 1.088 nm at low processing pressure, and the local surface roughness can reach 0.70 nm. At the same time, the material removal mechanism of diamond (100) and (111) crystal surface in rough machining stage was studied by the material phase of the surface product and debris. At this time, the mechanical action of abrasive particles on the machined surface was mainly micro-crushing removal. The (100) crystal plane is mechanoplastic and extruded. (111) the crystal plane is the cleavage of collapse and embrittlement. The physical removal is accompanied by phase transition, which is mainly converted to amorphous carbon and graphite. In this paper, based on the processing of SG polishing film, the effect and mechanism of (100) crystal surface in three different processing modes of MP (mechanical chemical polishing) and CMP (chemical mechanical polishing) were studied by adding mixed abrasives and chemical reagents. To improve the surface quality of diamond finishing stage and to provide theoretical basis for the removal mechanism of reactive polishing. The mechanism of mechanical removal of (100) grain surface was verified by scratch morphology and origin. Compared with the three processing methods, mechanochemical polishing can effectively improve the processing efficiency. The material removal rate is 25.5 nm / min, which is obviously superior to the other two processing results. The solid phase reaction between diamond surface material and silicon carbide abrasive induced by mechanical action can effectively promote the removal of amorphous and graphitized phase transition of diamond and the chemical mechanical polishing is conducive to the removal of corrosion at the crack of diamond surface. In this paper, the subsurface damage forms and damage scales of diamond on the (100) crystal plane of MCP and CMP have been studied. The damage forms are mainly amorphous, dislocation and lattice distortion, and the damage scale is between 2.0-3.3nm. Compared with other machining methods, the damage scale of mechanochemical polishing is about 3.3 nm, which is consistent with the larger material removal rate.
【学位授予单位】：华侨大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ163
【相似文献】
相关期刊论文 前10条
1 寇自力;人造整体单晶金刚石的应用[J];工具技术;2001年04期
2 房建国;李迪;池宪;;单晶金刚石微型刀具的工艺技术研究[J];航空精密制造技术;2011年01期
3 ;天然单晶金刚石焊接新技术[J];工具技术;1983年06期
4 谈耀麟;;单晶金刚石在高端技术领域的应用[J];超硬材料工程;2006年05期
5 卢猛;赵清亮;;单晶金刚石尖刀制备工艺的研究[J];工具技术;2008年10期
6 N.M.Filho,R.T.Coelho,J.f.G.Oliveira;单晶金刚石修整器的修整效率分析[J];机械工程师;2001年03期
7 周祥;汪建华;熊礼威;李伟;;单晶金刚石制备研究进展[J];硬质合金;2012年03期
8 谈耀麟;单晶金刚石工具[J];珠宝科技;2002年02期
9 ;单晶金刚石刀具材料[J];超硬材料工程;2011年06期
10 张韬;沈彬;孙方宏;张志明;;热丝化学气相沉积法制备优质微米亚微米级单晶金刚石的研究[J];金刚石与磨料磨具工程;2011年06期
相关硕士学位论文 前4条
1 刘雪婧;MPCVD合成单晶金刚石的外延生长研究[D];石家庄经济学院;2015年
2 薛洪明;单晶金刚石CMP工艺及在刀具刃磨中的应用[D];大连理工大学;2015年
3 李强;单晶金刚石的研磨与化学机械抛光工艺[D];大连理工大学;2013年
4 林晓棋;MPCVD技术合成工具级单晶金刚石的研究[D];武汉工程大学;2015年
，本文编号：2178183
本文链接：https://www.wllwen.com/kejilunwen/huaxuehuagong/2178183.html
