热退火条件下球状纳米硅晶粒成核势垒阈值研究
发布时间：2018-08-27 17:10
【摘要】：利用纳秒脉冲激光烧蚀(PLA)技术,在室温、真空环境中沉积制备了非晶Si薄膜,并通过热退火实现了薄膜样品的晶化.利用扫描电子显微镜(SEM)、X线衍射(XRD)仪和Raman散射(Raman)仪等技术对退火后的样品进行形貌表征和晶态成分分析,确定了非晶Si薄膜晶化的热退火阈值温度以及在该条件下所形成球状纳米Si晶粒的平均直径,结果分别为850℃和15nm.假定纳米Si晶粒为理想球体,结合固相晶化过程中的能量变化,计算得到了晶化形成直径15nm球状晶粒所需要的能量,即成核势垒阈值,量级约为10-11 mJ.
[Abstract]:Amorphous Si thin films were prepared by nanosecond pulsed laser ablation (PLA) technique at room temperature and vacuum. The crystallization of the films was realized by thermal annealing. The morphology and crystal composition of the annealed samples were characterized by scanning electron microscope (SEM) (SEM) X-ray diffractometer (XRD) and Raman scattering (Raman) (Raman). The thermal annealing threshold temperature of amorphous Si films and the average diameter of spherical nanocrystalline Si grains formed under these conditions are determined. The results are 850 鈩，
本文编号：2207906
[Abstract]:Amorphous Si thin films were prepared by nanosecond pulsed laser ablation (PLA) technique at room temperature and vacuum. The crystallization of the films was realized by thermal annealing. The morphology and crystal composition of the annealed samples were characterized by scanning electron microscope (SEM) (SEM) X-ray diffractometer (XRD) and Raman scattering (Raman) (Raman). The thermal annealing threshold temperature of amorphous Si films and the average diameter of spherical nanocrystalline Si grains formed under these conditions are determined. The results are 850 鈩，
本文编号：2207906
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