硫系玻璃基底高强减反膜制备工艺技术研究

发布时间：2018-10-10 13:35

【摘要】：硫系玻璃是一种新型的红外光学材料,具有红外透过波段宽、折射率温度系数小、可精密模压成型等优点,是较好的红外光学系统窗口材料。探究硫系玻璃的镀膜特性及其高强减反膜的制备技术将有利于硫系玻璃的进一步推广和应用。本文通过实验研究了硫系玻璃基底(IRG205,IRG206)耐受薄膜制备工艺的材料特性,明确了基底可承受的离子辅助轰击强度和时间。在此基础上探索了硫系玻璃基底(IRG205,IRG206)上8～12μm高强减反膜的制备技术。针对硫系玻璃基底(IRG205,IRG206)的低软化点特点,研究了 PECVD技术低温沉积DLC薄膜的制备工艺及薄膜特性,探讨了硫系玻璃基底(IRG205,IRG206)上低温沉积高强减反膜的可行性,最终采用组合沉积技术路线在硫系玻璃基底(IRG205,IRG206)上试制了红外高强减反膜。研究结果表明:(1)硫系玻璃基底耐受辅助离子轰击能力较弱,其轰击强度和时间需要严格控制。(2)采用PECVD技术,在硫系玻璃基底(IRG205,IRG206)上室温下沉积DLC可行,当薄膜厚度不大于200nm时,薄膜牢固度符合JB/T8226.1-1999标准。(3)不宜采用PECVD技术沉积8～12μm波段的介质光学薄膜,所制备的薄膜材料在此波段有较强的吸收峰。(4)在硫系玻璃基底(IRG205,IRG206)上采用PVD制备高效减反膜和PECVD制备DLC的组合方法沉积8～12μm高强减反膜可行,薄膜平均透过率大于90%,薄膜抗磨强度和环境试验达到了 JB/T8226.1-1999标准要求。
[Abstract]:Sulfur glass is a new kind of infrared optical material. It is a good window material for infrared optical system because of its wide infrared transmission band, low temperature coefficient of refractive index and precision molding. It is helpful for the further popularization and application of sulfur glasses to explore the coating characteristics and the preparation technology of high strength antireflection film. In this paper, the material properties of the preparation process of sulfur-based glass substrates (IRG205,IRG206) are studied experimentally, and the ion-assisted bombardment intensity and time of the substrates are determined. On this basis, the preparation technology of 8 ~ 12 渭 m high strength antireflection film on sulfur glass substrate (IRG205,IRG206) was investigated. In view of the characteristics of low softening point of sulfur glass substrates (IRG205,IRG206), the preparation process and characteristics of DLC thin films deposited by PECVD technique at low temperature were studied. The feasibility of low temperature deposition of high strength antireflection films on IRG205,IRG206 substrates was discussed. Finally, the infrared high strength antireflection film was prepared on the sulfur glass substrate (IRG205,IRG206) by combined deposition technology. The results show that: (1) the resistance of sulfur glass substrate to auxiliary ion bombardment is relatively weak, and its bombardment intensity and time need to be strictly controlled. (2) it is feasible to deposit DLC on IRG205,IRG206 substrate at room temperature by using PECVD technique. When the thickness of the film is less than that of 200nm, it is feasible to deposit DLC on the glass substrate (IRG205,IRG206) at room temperature. (3) it is not advisable to use the PECVD technique to deposit 8 ~ 12 渭 m dielectric optical thin films. The prepared thin films have a strong absorption peak in this band. (4) it is feasible to prepare 812 渭 m high strength antireflection films by using PVD to prepare high performance antireflection films and PECVD to prepare DLC on sulfur glass substrates (IRG205,IRG206). The average transmittance of the film is more than 90. The antiwear strength and environmental test of the film meet the requirements of JB/T8226.1-1999 standard.
【学位授予单位】：西安工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TB383.2;TQ171.7

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