金属局域表面等离子体修饰的氧化锌基紫外探测器的性能研究

发布时间：2018-12-12 07:12

【摘要】：ZnO是一种六方晶体结构的直接带隙的半导体材料(禁带宽度为3.37 eV),具有缺陷密度低、环保、原材料分布广泛、抗辐射能力强、可在低温环境下外延生长等优点。并且通过调节Mg元素掺杂量,ZnO基薄膜材料的禁带宽度可在3.37 eV~7.80 eV范围内连续调节。因此,这种优良的紫外光电材料受到了人们的广泛关注。本论文主要利用射频磁控溅射技术来制备ZnO基薄膜,并通过光刻工艺制备成金属-半导体-金属(MSM)结构的ZnO基紫外光电探测器。主要研究了ZnO基薄膜的结晶性及光学性能;并基于金属局域表面等离子激元理论,提升ZnO基薄膜的光学吸收和探测器的响应度,从而制备高性能紫外光电探测器。所做的工作如下:1.研究了包埋Pt纳米粒子对紫外探测器响应性能的影响。结果表明,包埋Pt纳米粒子可以明显提高探测器响应度,且响应度值跟着Pt纳米粒子在薄膜中包埋深度增加然后逐渐上升。2.通过在MSM型ZnO紫外光电探测器中包埋不同深度的Pt纳米粒子,结合改变包埋深度和入射光方向这两个因素来达到调控响应度的目标。3.制备了Pt/ZnO多层薄膜结构的紫外探测器。实验结果表明,薄膜包埋适量Pt纳米粒子层可以极大提高器件的响应性能。4.使用Pt纳米粒子表面修饰MgZnO紫外探测器,实验结果显示Pt纳米粒子可以显著提高探测器的响应性能,随着Pt纳米粒子溅射时间的增长,器件的响应度先上升后下降。
[Abstract]:ZnO is a hexagonal crystal structure with direct band gap semiconductor material (band gap 3.37 eV),) with the advantages of low defect density, environmental protection, wide distribution of raw materials, strong radiation resistance, and can be epitaxially grown at low temperature. By adjusting the doping amount of Mg, the bandgap of ZnO based thin films can be continuously adjusted in the range of 3.37 eV~7.80 eV. Therefore, this kind of excellent ultraviolet photoelectric material has been paid more and more attention. In this thesis, ZnO based thin films were prepared by RF magnetron sputtering, and ZnO based UV photodetectors with metal-semiconductor metal (MSM) structure were fabricated by photolithography. The crystallization and optical properties of ZnO based thin films were studied, and the optical absorption and the responsivity of ZnO based thin films were improved based on the metal local surface plasmon theory, thus the high performance UV photodetectors were fabricated. The work done is as follows: 1. The effect of embedded Pt nanoparticles on the response performance of UV detector was studied. The results show that the embedded Pt nanoparticles can obviously improve the detector responsivity, and the responsivity increases gradually with the increase of the embedded depth of Pt nanoparticles in the films. 2. By embedding Pt nanoparticles of different depths in MSM type ZnO photodetectors, and combining the two factors of changing the embedding depth and the direction of incident light, the target of adjusting the responsivity is achieved. UV detectors with Pt/ZnO multilayer structure were prepared. The experimental results show that the appropriate amount of Pt nanoparticles embedded in the film can greatly improve the response performance of the device. 4. Pt nanoparticles were used to modify MgZnO UV detectors. The experimental results show that Pt nanoparticles can significantly improve the response performance of the detectors. With the increase of the sputtering time of Pt nanoparticles, the responsivity of the devices increases first and then decreases.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN23;TQ132.41

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