抛光液pH值、温度和浓度对蓝宝石抛光效率的影响
发布时间：2019-05-08 17:47
【摘要】：目的研究抛光液pH值、温度和浓度对化学机械抛光蓝宝石去除率的影响,以提高抛光效率。方法采用CP4单面抛光试验机对直径为50.8 mm C向蓝宝石晶元进行化学机械抛光,通过电子分析天平对蓝宝石抛光过程中的材料去除率进行了分析,采用原子力显微镜(AFM)对蓝宝石晶元抛光前后的表面形貌和粗糙度(Ra)进行了评价。结果蓝宝石在化学机械抛光过程中的材料去除率均随抛光液pH值和温度的升高呈先增大后减小趋势。当抛光原液与去离子水按1:1的体积比混合配制抛光液,KOH调节pH值为12.2,水浴加热抛光液35℃时,蓝宝石抛光的材料去除率(MRR)达到1.119μm/h,Ra为0.101 nm。结论随着pH的增大,化学作用逐渐增强,而机械作用逐渐减弱,在pH为12.2的时候能达到平衡点,此时的MRR最佳;随着温度的升高,化学作用逐渐增强,而机械作用保持不变,抛光液温度为35~40℃时,化学作用与机械作用达到平衡,MRR最佳,当温度高于40℃后,抛光液浓度明显增大,而过高的浓度会导致MRR的减小。抛光液的相关性能优化后,化学机械抛光蓝宝石的MRR较优化前提高了71.4%。
[Abstract]:Objective to study the effect of pH value, temperature and concentration of polishing solution on the removal rate of sapphire in chemical mechanical polishing, so as to improve the polishing efficiency. Methods the chemical mechanical polishing of sapphire elements with diameter of 50.8 mm C was carried out by CP4 single side polishing tester, and the material removal rate in the process of sapphire polishing was analyzed by electronic analysis balance. The surface morphology and roughness of sapphire before and after polishing were evaluated by atomic force microscope (AFM). Results the material removal rate of sapphire in the process of chemical mechanical polishing increased at first and then decreased with the increase of pH value and temperature of polishing solution. When the polishing solution was mixed with deionized water at a volume ratio of 1:1, and the pH value of KOH was adjusted to 12.2, the material removal rate of sapphire polishing reached 1.119 渭 m / h and Ra was 0.101 nm., when the polishing solution was heated at 35 鈩，
本文编号：2472106
[Abstract]:Objective to study the effect of pH value, temperature and concentration of polishing solution on the removal rate of sapphire in chemical mechanical polishing, so as to improve the polishing efficiency. Methods the chemical mechanical polishing of sapphire elements with diameter of 50.8 mm C was carried out by CP4 single side polishing tester, and the material removal rate in the process of sapphire polishing was analyzed by electronic analysis balance. The surface morphology and roughness of sapphire before and after polishing were evaluated by atomic force microscope (AFM). Results the material removal rate of sapphire in the process of chemical mechanical polishing increased at first and then decreased with the increase of pH value and temperature of polishing solution. When the polishing solution was mixed with deionized water at a volume ratio of 1:1, and the pH value of KOH was adjusted to 12.2, the material removal rate of sapphire polishing reached 1.119 渭 m / h and Ra was 0.101 nm., when the polishing solution was heated at 35 鈩，
本文编号：2472106
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