缓蚀性功能膜对铜在NaCl溶液中腐蚀行为影响的研究

发布时间：2018-01-25 22:37

本文关键词： 铜自组装膜 Cu_9S_5膜 C_(18)H_(36)O_2膜 BTESPT 扫描电化学显微镜缓蚀　出处：《江苏师范大学》2017年硕士论文　论文类型：学位论文

【摘要】：铜在侵蚀性离子(Cl-)存在的情况下极易被腐蚀,因此研究金属铜的腐蚀与防护具有重要的理论价值和实际意义。本文采用扫描电化学显微镜(SECM)结合电化学阻抗谱(EIS)和极化曲线(Tafel)等电化学方法,研究了混合自组装膜、Cu_9S_5膜、C_(18)H_(36)O_2膜和BTESPT硅烷膜对铜在含氯离子溶液中腐蚀的抑制作用,主要研究内容如下:1.交流电处理自组装膜对铜在NaCl溶液中缓蚀行为的影响对混合自组装膜(α-氨基吡啶缩水杨醛希夫碱(HL)和十二烷基硫醇(DT))交流电处理后,用扫描电化学显微镜(SECM)结合Tafel和电化学阻抗谱(EIS)等电化学方法研究铜表面由于自组装膜的腐蚀行为。实验结果表明,当交流电(AC)处理电位位于阴极区间时,缓蚀效率提高,电极表面点蚀动态过程受到抑制。主要原因是交流电通过还原铜表面氧化膜以及促进其电极表面配合物的形成,从而提高自组装膜的缓蚀能力。2.Cu_9S_5膜和C_(18)H_(36)O_2膜对铜在NaCl溶液中腐蚀的抑制作用采用浸渍法在铜基底表面形成Cu_9S_5膜,然后经过0.5wt%硬脂酸溶液处理,使其表面具有疏水性;采用自组装的方法在铜表面形成C_(18)H_(36)O_2膜。本文利用电化学方法与XPS、EDS连用研究了Cu_9S_5膜和C_(18)H_(36)O_2膜在对铜缓蚀性能的影响,实验结果表明Cu_9S_5与腐蚀介质有关,C_(18)H_(36)O_2与组装时间有关。实验结果表明Cu_9S_5膜和C_(18)H_(36)O_2膜的缓蚀效率分别可以达到92.9%和93.6%,均能较好的抑制铜的腐蚀。3.BTESPT硅烷膜对铜电极在NaCl溶液中腐蚀的抑制作用通过电化学方法和SEM研究了BTESPT硅烷膜对铜腐蚀的抑制作用。结果表明,铜的缓蚀效率取决于硅烷溶液的水解时间,水解时间越长,缓蚀效率越低。为了进一步提高硅烷膜的缓蚀效率,用0.5wt%十四酸溶液对硅烷膜进行改性,发现十四酸分子嵌入到硅烷膜的空间网状结构中,提高了硅烷膜的致密性和稳定性,从而提高金属硅烷膜的缓蚀效率。
[Abstract]:Copper is easy to be corroded in the presence of corrosive ion Cl-. Therefore, it is of great theoretical value and practical significance to study the corrosion and protection of copper. In this paper, scanning electrochemical microscope (SECM) combined with electrochemical impedance spectroscopy (EIS) and polarization curve (. Tafel) and other electrochemical methods. The inhibition of copper corrosion in chloride solution by BTESPT silane film and CSTL / S _ (18) H _ (18) / S _ (36) O _ (2) film were studied. The main contents of this study are as follows: 1. Effects of AC self-assembled films on corrosion inhibition behavior of copper in NaCl solution on mixed self-assembled films (伪 -aminopyridyl glycidyl Schiff base) and 12 alkyl mercaptan (. After AC treatment. The corrosion behavior of copper surface due to self-assembly was studied by means of scanning electrochemical microscope (SECM) combined with Tafel and electrochemical impedance spectroscopy (EIS). When the AC treatment potential is located in the cathode range, the corrosion inhibition efficiency is improved. The kinetic process of pitting corrosion on the electrode surface is inhibited mainly because of the alternating current through reducing the oxide film on the surface of copper and promoting the formation of the complex on the electrode surface. Thus improving the corrosion inhibition ability of the self-assembled films. 2. Cu9S5 and CSP _ (18) HSP _ 6). Inhibition of copper corrosion in NaCl solution by O _ 2 film Cu_9S_5 film was formed on the surface of copper substrate by impregnation method. The surface of stearic acid was hydrophobically treated with 0.5 wt% stearic acid solution. In this paper, we use the method of self-assembly to form the C _ S _ (18) H _ (th) S _ (36) O _ (2) thin film on the copper surface. The electrochemical method and XPS are used in this paper. EDS was used to study the effect of Cu_9S_5 film and C _ S _ 2O _ 2 film on copper corrosion inhibition performance. The experimental results show that Cu_9S_5 is related to corrosion medium. The results of the experiment show that the Cu_9S_5 membrane and the C / C / C / T / T / C / C / T / T / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C. The corrosion inhibition efficiency of O _ 2 film can reach 92.9% and 93.6% respectively. The inhibition effect of BTESPT silane film on the corrosion of copper electrode in NaCl solution was studied by electrochemical method and SEM. Inhibition. The results show. The corrosion inhibition efficiency of copper depends on the hydrolysis time of silane solution. The longer the hydrolysis time, the lower the corrosion inhibition efficiency. In order to further improve the corrosion inhibition efficiency of silane film, the silane film was modified with 0.5 wt% 14 acid solution. It is found that 14 acid molecule is embedded in the space network of silane film, which improves the densification and stability of silane film and improves the corrosion inhibition efficiency of metallic silane film.
【学位授予单位】：江苏师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TG174.4

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