载盘预处理对纯铝薄膜小丘生成的影响

发布时间：2018-02-05 03:15

本文关键词： 纯铝薄膜小丘 MATLAB 磁控溅射残余气体　出处：《液晶与显示》2017年02期 　论文类型：期刊论文

【摘要】：在TFT Array制程中,使用刚刚更换过清洗品的载盘生产纯铝薄膜时,基板周边常常会出现小丘,小丘的生成将严重影响产品的电学性能和良率。本文通过生产线上常用的阵列宏微观缺陷检查机对纯铝薄膜表面进行观察并存图,利用MATLAB软件对图片进行分析和计算,实现了工厂端对小丘发生情况的快速识别和比对。本文就可能影响小丘生成的纯铝薄膜膜厚、载盘预处理时间以及成膜后玻璃基板在加热腔室内的停留时间等几个因素设计了正交和单因素实验。实验结果表明,载盘的预处理时间是影响小丘生成的首要因素,当载盘预处理时间大于90 min,膜厚为铝/钼300/80nm,成膜后基板在加热腔室不停留的情况下,可以获得表面几乎无小丘的纯铝薄膜,这一结果对有效避免生产过程中因更换清洗品等原因导致的小丘生成具有重要的意义。
[Abstract]:In the TFT Array process, mounds often appear around the substrate when pure aluminum film is produced using a newly replaced tray. The formation of the mound will seriously affect the electrical properties and yield of the product. In this paper, the surface of pure aluminum film is observed by using the array macro and micro defect inspection machine commonly used in the production line. The images are analyzed and calculated by MATLAB software, and the quick identification and comparison of the occurrence of the small mounds at the factory end are realized. In this paper, the thickness of pure aluminum films generated by the mounds may be affected. The orthogonal and single factor experiments were designed for the pretreatment time of the plate and the residence time of the glass substrate in the heating chamber. The preprocessing time of disk loading is the primary factor affecting the formation of small mound. When the pretreatment time is more than 90 mins, the film thickness is 300 / 80nm for aluminum / molybdenum. The pure aluminum film with almost no dome on the surface can be obtained when the substrate does not stay in the heating chamber. This result is of great significance to avoid the formation of small mounds caused by the replacement of cleaning products in the production process.
【作者单位】：合肥京东方光电科技有限公司;
【分类号】：TG146.21;TB383.2
【正文快照】： 1引言目前,纯铝薄膜因其具有低电阻率(3.3μΩ·cm)、低成本、易刻蚀等优点在TFT-LCD生产中得到了广泛的应用[1]。然而,TFT制造工艺涉及多个高温过程,且纯铝的热膨胀系数较高、与基板及TFT不同材料间的热膨胀系数存在差异,这就导致了纯铝薄膜热应力的增大,为小丘的形成埋下了

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