占空比对铌表面熔盐脉冲电沉积渗硅的影响

发布时间：2018-03-12 16:48

本文选题：占空比　切入点：铌　出处：《热加工工艺》2016年16期 　论文类型：期刊论文

【摘要】：采用熔盐脉冲电沉积方法在纯铌表面制备出渗硅层。研究了占空比对渗硅层成分、沉积速率、组织和相结构的影响,并考察了渗硅层的高温抗氧化性。结果表明,渗硅层成分不受占空比影响。随占空比的增大,渗硅层晶粒由细小变得粗大,渗硅层组织致密、平整。占空比对渗硅层相结构无影响,均由单相Nb Si2组成,并在(110)和(200)晶面上具有择优取向。Nb Si2渗硅层使得纯铌的高温抗氧化性能得以提高。
[Abstract]:The effect of duty cycle ratio on the composition, deposition rate, microstructure and phase structure of siliconized layer was studied. The oxidation resistance of siliconized layer at high temperature was investigated. The composition of siliconized layer is not affected by duty cycle. With the increase of duty cycle, the grain size of siliconized layer changes from fine to coarse, and the structure of siliconized layer is compact and smooth. The duty cycle ratio has no effect on the phase structure of siliconized layer, and it is composed of single phase NB Si2. Moreover, the preferred orientation. NB Si2 siliconizing layer on the crystal faces of Niobium (110) and Ni200) can improve the oxidation resistance of pure niobium at high temperature.
【作者单位】：华北理工大学冶金与能源学院现代冶金技术教育部重点实验室;
【基金】：河北省自然科学基金资助项目(E2014209275)
【分类号】：TG174.4

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