高放核废料存储环境下温度对纯铜腐蚀的影响（英文）

发布时间：2018-03-31 19:12

本文选题：铜腐蚀　切入点：硫化物　出处：《Transactions of Nonferrous Metals Society of China》2017年06期

【摘要】：系统研究在高放核废料存储环境下温度对纯铜腐蚀的影响。采用交流阻抗谱、Mott-Schottky技术、动电位以及恒电位极化曲线分析纯铜在不同温度下的腐蚀行为;并采用体视显微镜以及扫描电镜观察样品表面形貌,同时结合X射线光电子能谱分析钝化膜成分。结果表明,钝化膜阻抗并不随着温度的升高而一直降低,在60°C由于致密的外层结构阻抗反常增大;点蚀在此环境下可能发生且钝化膜的点蚀电位随着温度的升高而降低;钝化膜主要成分为Cu_2S,而CuS的含量随着温度的升高而增加;钝化膜主要呈p型半导体特性,阳离子空位密度在1023 cm~(-3)数量级且随着温度的升高其密度增大。
[Abstract]:The effect of temperature on corrosion of pure copper in the environment of high radioactive nuclear waste storage was studied systematically. The corrosion behavior of pure copper at different temperatures was analyzed by means of AC impedance spectroscopy Mott-Schottky technique, potentiodynamic and potentiostatic polarization curves. The surface morphology was observed by stereoscopic microscope and scanning electron microscope, and the composition of passivation film was analyzed by X-ray photoelectron spectroscopy. The results showed that the impedance of passivation film did not decrease with the increase of temperature. The corrosion potential of the passivation film decreases with the increase of temperature, and the main composition of the passivation film is CuS2S, while the content of CuS increases with the increase of temperature, and the corrosion potential of the passivated film decreases with the increase of temperature, due to the anomalous increase of the impedance of the dense outer structure at 60 掳C, and the pitting potential of the passivated film decreases with the increase of temperature. The passivation film is mainly p-type semiconductor with a cationic vacancy density of 1023 cm ~ (-1) -3) and increasing with the increase of temperature.
【作者单位】：北京科技大学腐蚀防护中心教育部重点实验室;
【基金】：Project(FRF-TP-14-011C1) supported by the Fundamental Research Funds for the Central Universities,China Project(2014CB643300) supported by the National Basic Research Program of China
【分类号】：TG178

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