超疏水金属基圆柱阵列的掩膜微细加工研究

发布时间：2018-04-09 02:13

本文选题：超疏水表面　切入点：金属　出处：《大连理工大学》2016年硕士论文

【摘要】：超疏水表面具有自清洁、耐腐蚀、减磨减阻、液滴定向运输及无损转移、防雾、防结冰结霜等优异性能,金属基超疏水表面的制备在工业生产、医疗以及国防领域都具有广阔的应用前景。针对现有金属基超疏水表面制备方法存在的材料种类受限、不利于实现工业生产以及成本较高等问题,本文提出采用掩膜电化学方法和掩膜化学方法在铝和铜基体上制得具有微小圆柱阵列结构的超疏水表面,通过试验研究加工参数对圆柱阵列结构尺寸的影响规律以及圆柱阵列结构尺寸对金属表面润湿性的影响规律。掩膜电化学加工圆柱阵列微结构的试验结果显示,超声振动可有效改善电化学刻蚀的表面质量；铝基表面制备光刻胶掩膜较为合适的曝光时间和显影时间分别为20s和240s；随着电化学刻蚀过程中电流密度的增加和加工时间的延长,阵列圆柱的直径逐渐减小,间隙和高度逐渐增加,但过长的加工时间会引起结构的破坏。掩膜化学加工圆柱阵列微结构的试验结果显示,铜基表面制备光刻胶掩膜较为合适的曝光时间和显影时间分别为20s和360s,随着化学刻蚀时间的延长,阵列圆柱的直径逐渐减小,间隙和高度逐渐增加,过长的加工时间同样会引起结构的破坏。根据所得加工参数对圆柱阵列结构尺寸的影响规律选用合适的掩膜图案尺寸以及加工参数,分别在铝基和铜基表面制备具有不同尺寸参数的圆柱阵列微结构,经低表面能修饰后,研究不同尺寸参数对表面润湿性的影响规律。试验发现,由于铝和铜自身性能的不同,水滴在具有相同尺寸圆柱阵列微结构的铝和铜表面可能呈现出两种不同的接触状态,铝表面用于“支撑”起变形水滴而实现Cassie-Baxter状态所需的阵列圆柱高度较高,而铜表面较低的阵列圆柱高度即可使水滴在其上实现Cassie-Baxter状态。水滴在具有圆柱阵列微结构的表面上呈Cassie-Baxter状态时更易实现超疏水性能,且表面接触角随阵列圆柱直径的减小和间隙的增大而增大,但随高度的变化并不明显。当铝基表面阵列圆柱直径、间隙和高度分别为60 μm、100μm口40μm时,可获得平均接触角为156.50的超疏水表面；当铜基表面阵列圆柱的直径、间隙和高度分别为60μm、100μm和45μm时,可获得平均接触角为161.5°的超疏水表面。
[Abstract]:Superhydrophobic surfaces have excellent properties such as self-cleaning, corrosion resistance, wear reduction and drag reduction, droplet transport and non-destructive transfer, anti-fogging, anti-icing and frosting, etc. The preparation of superhydrophobic surfaces based on metal is used in industrial production.The field of medical treatment and national defense has broad application prospect.In view of the limited kinds of materials existing in the existing metal-based superhydrophobic surface preparation methods, which are not conducive to the realization of industrial production and high cost, etc.In this paper, the superhydrophobic surfaces with micro cylindrical arrays on aluminum and copper substrates have been prepared by mask electrochemical method and mask chemistry method.The effect of machining parameters on the structure size of cylindrical array and the wettability of metal surface were studied by experiments.The experimental results show that ultrasonic vibration can effectively improve the surface quality of electrochemical etching.The suitable exposure time and developing time for preparing photoresist mask on aluminum substrate were 20 s and 240 s respectively. With the increase of current density and processing time during electrochemical etching, the diameter of array cylinder gradually decreased.The gap and height increase gradually, but long processing time will cause damage to the structure.The experimental results show that the appropriate exposure time and developing time for photoresist mask preparation on copper base surface are 20 s and 360 s respectively. The diameter of the array cylinder decreases with the increase of chemical etching time.Gap and height increase gradually, too long processing time will also cause damage to the structure.According to the influence of machining parameters on the structural dimensions of cylindrical arrays, appropriate mask pattern size and machining parameters were selected, and cylindrical array microstructures with different size parameters were prepared on aluminum and copper base surfaces, respectively.The effect of different size parameters on surface wettability was studied after low surface energy modification.It is found that due to the different properties of aluminum and copper, water droplets may present two different contact states on aluminum and copper surfaces with the same size cylindrical array microstructures.The aluminum surface is used to "support" the deformed water droplets and the array cylinder height required to achieve Cassie-Baxter state is higher, while the lower copper surface array cylinder height enables the water droplets to realize the Cassie-Baxter state on it.The hydrophobicity of water droplets on the surface with cylindrical array microstructures is Cassie-Baxter, and the surface contact angle increases with the decrease of the cylinder diameter and the increase of the gap, but the change of the surface contact angle is not obvious with the height.A superhydrophobic surface with an average contact angle of 161.5 掳can be obtained.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TG174.4

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