RB-SiC亚表面损伤检测及其旋转超声磨削亚表面损伤特征

发布时间：2018-06-29 21:14

本文选题：旋转超声磨削 + 反应烧结碳化硅(RB-SiC)材料　；参考：《光学精密工程》2017年10期

【摘要】：分别采用截面抛光法(包括以硅片作陪衬与以聚酯作陪衬两种形式)和界面黏接法检测了反应烧结碳化硅(Reaction Bonded SiC,RB-SiC)旋转超声磨削加工的亚表面损伤。为确定其中的最佳检测形式,采用表面破碎层深度、最大破碎层深度、平均裂纹深度、最大裂纹深度4个亚表面损伤评价指标对两种方法分别检测到的RB-SiC旋转超声磨削亚表面损伤进行对比分析。结果显示:截面抛光法(硅片作陪衬)检测到的4个指标值依次为3.30μm、6.59μm、8.64μm、17.44μm;截面抛光法(聚酯作陪衬)检测到的4个指标值依次为5.71μm、14.33μm、15.36μm、54.82μm;而界面黏接法检测到的4个指标值依次为9.19μm、19.45μm、13.04μm、32.20μm。试验结果表明,截面抛光法(硅片作陪衬)检测的精度更高,检测的亚表面损伤更符合实际情况。最后,基于此方法,对旋转超声磨削RB-SiC材料的亚表面损伤特征进行了总结。
[Abstract]:The subsurface damage of reaction bonded silicon carbide (RB-SiC) by rotary ultrasonic grinding was investigated by cross section polishing (including silicon wafer and polyester) and interfacial bonding method. In order to determine the best detection form, the surface fracture layer depth, the maximum fracture layer depth and the average crack depth are adopted. The maximum crack depth is evaluated by four subsurface damage indexes. The RB-SiC rotary ultrasonic grinding subsurface damage detected by the two methods is compared and analyzed. The results showed that the four index values detected by cross-section polishing (wafer as foil) were 3.30 渭 m ~ 6.59 渭 m ~ (8.64) 渭 m ~ (-1) ~ 17.44 渭 m, 4 ~ (th) values by cross-section polishing method were 5.71 渭 m ~ (14.33) 渭 m ~ (15.36) 渭 m ~ (54.82) 渭 m, and those by interfacial adhesion method were 9.19 渭 m ~ (19.45) 渭 m ~ (13.04) 渭 m ~ (13) ~ (20) 渭 m ~ (-1). The experimental results show that the precision of section polishing (wafer foil) detection is higher and the detection of subsurface damage is more in line with the actual situation. Finally, based on this method, the subsurface damage characteristics of rotating ultrasonic grinding RB-SiC materials are summarized.
【作者单位】：西南交通大学机械工程学院;
【基金】：教育部重点实验室开放式基金资助项目(No.JMTZ201605) 国家自然科学基金资助项目(No.51305369) 中国博士后科学基金资助项目(No.2012M521708) 高等学校博士学科点专项科研基金新教师类课题资助项目(No.20130184120007) 中央高校基本科研业务费专项资金资助项目(No.SWJTU11CX023)
【分类号】：TG580.6

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