Ni-W基底上全化学溶液法制备YBCO涂层导体研究
发布时间:2018-07-03 11:45
本文选题:全化学溶液法 + YBCO涂层导体 ; 参考:《西安理工大学》2017年硕士论文
【摘要】:第二代高温超导带材又称YBa2Cu307-δ (YBCO)涂层导体,因其具有优异且独特的物理性能,而广泛应用于电力领域。如今,具有高成本的物理方法是用于制备高质量过渡层和YBCO涂层导体的成熟技术。但是,化学溶液沉积(CSD)法具有低成本的特点,它是YBCO涂层导体可大规模产业化的关键。此外,CSD法也是用于制造高质量过渡层,甚至YBCO薄膜的另一个重要途径。本研究选用Ni-5%W合金作为基底,并使用全化学溶液法制备YBCO涂层导体,其中过渡层材料选用与基底和YBCO晶格匹配较高的单一薄膜SrTiO3 (STO)和复合薄膜CeO2/La2Zr2O7(LZO),并分别在这两种过渡层上外延生长YBCO薄膜。本文对过渡层的前驱体溶液配制、处理工艺以及YBCO薄膜的制备进行了研究,并得出以下结论:(1)采用CSD法在Ni-5%W基底上制备了单一过渡层SrTiO3 (STO)薄膜和La3+掺杂的STO (LSTO)薄膜,确定了单一(100)择优取向的LSTO薄膜的制备工艺;(2)基于原有工艺制备了不同镧锆元素比例的LZO前驱溶液,在10%H2-N2混合气氛、1050 ℃保温1 h的热处理工艺下得到了比例为La3+/Zr4+ = 1、La3+/Zr4+ = 1.1、La3+/Zr4+= 1.2三种薄膜,相较原有薄膜其取向性、面内外织构、表面粗糙度和致密度都得到了提高;(3)采用硝酸铈为原料制备了稳定的氧化铈前驱溶液,于低温300 ℃下热分解30 min且高温1050℃保温25 min的热处理工艺获得了 CeO2薄膜且质量良好;(4)基于优化后的LZO薄膜和CeO2薄膜的制备工艺,成功制备出了质量优良(单一的取向、良好的面内外织构、平整光滑的表面)的复合过渡层CeO2/LZO;(5)采用全化学溶液法在CeO2/LZO复合过渡层上外延生长了 Y3+ : Ba2+ : Cu2+= 1 :2:3的YBCO薄膜。通过对YBCO薄膜热处理氧分压参数的研究,成功制备了表面、取向良好的单层YBCO薄膜,最终取得了Jc ≥ 1.00 MA/cm2 (77 K,0T)的突破。
[Abstract]:The second generation high temperature superconducting tape, also known as YBA _ 2Cu _ 307- 未 (YBCO) coated conductor, is widely used in power industry because of its excellent and unique physical properties. Nowadays, high-cost physical methods are used to prepare high-quality transition layers and YBCO coated conductors. However, the chemical solution deposition (CSD) method has the characteristics of low cost, which is the key to the large-scale industrialization of YBCO coated conductors. In addition, CSD method is another important way to fabricate high quality transition layer, even YBCO thin film. In this study, Ni-5W alloy was used as substrate and YBCO coated conductor was prepared by all-chemical solution method. The transition layer materials are SrTiO _ 3 (STO) and CEO _ 2 / La _ 2Zr _ 2O _ 7 (LZO), which match well with the substrate and YBCO lattice. YBCO thin films are grown on these two transition layers respectively. In this paper, the preparation of precursor solution for transition layer, the treatment process and the preparation of YBCO thin films are studied. The following conclusions are obtained: (1) single transition layer SrTiO3 (STO) thin films and La3-doped STO (LSTO) thin films have been prepared on Ni-5W substrate by CSD method. The preparation process of LSTO thin films with single (100) preferred orientation was determined. (2) LZO precursor solution with different lanthanum and zirconium ratios was prepared based on the original process. Three kinds of films, La _ 3 / Zr _ 4 = 1 ~ (-1) La _ (3 / Zr _ 4) = 1.1% La _ (3 / Zr _ 4) = 1.2, were obtained by heat treatment at 1050 鈩,
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