基于分子动力学仿真的纳米胶体射流抛光材料去除机理

发布时间：2018-07-08 08:40

本文选题：机理 + 纳米胶体　；参考：《中国表面工程》2017年01期

【摘要】：利用分子动力学模拟了纳米Si O2颗粒与单晶硅(100)表面的碰撞过程,以此来分析纳米胶体射流抛光的材料去除机理。仿真结果显示:粒径为7 nm的Si O2颗粒其速度在50 m/s时,与单晶硅工件表面的碰撞作用不会引起工件表面的原子排布的变化;而若要使碰撞对单晶硅工件表面原子排布产生影响,纳米Si O2颗粒的速度需大于250 m/s。以单晶硅工件为加工对象进行了纳米胶体射流抛光加工试验。利用激光拉曼光谱对加工前后单晶硅工件表面原子排布状况进行了比较,其结果与分子动力学仿真结果吻合。利用X射线光电子能谱,研究了加工前后纳米Si O2颗粒与单晶硅工件表面原子之间化学键的变化。通过仿真和试验得出:纳米胶体射流抛光中,纳米颗粒碰撞所产生的机械作用不能直接去除工件材料,材料的去除是纳米颗粒与工件表面之间机械作用和化学作用的共同结果。
[Abstract]:The collision process between nano-SiO _ 2 particles and the surface of monocrystalline silicon (100) was simulated by molecular dynamics to analyze the material removal mechanism of nano-colloidal jet polishing. The simulation results show that when the particle size of Sio _ 2 is at 50 m / s, the collision with the surface of monocrystalline silicon will not result in the change of atomic arrangement on the surface of the workpiece. The velocity of nano-SiO _ 2 particles must be more than 250 m / s for the impact to influence the atomic arrangement on the surface of monocrystalline silicon workpiece. Nano-colloidal jet polishing experiments were carried out on monocrystalline silicon workpiece. The atomic arrangement of monocrystalline silicon workpiece before and after processing was compared by laser Raman spectroscopy. The results are in agreement with the results of molecular dynamics simulation. The changes of chemical bonds between nanocrystalline Sio _ 2 particles and monocrystalline silicon workpiece surface atoms were studied by X-ray photoelectron spectroscopy (XPS). Through simulation and experiment, it is concluded that the mechanical action caused by the impact of nanoparticles in the polishing of nano-colloid jet can not directly remove the workpiece material, and the removal of the material is the joint result of the mechanical and chemical action between the nanoparticles and the surface of the workpiece.
【作者单位】：河南工业大学机电工程学院;哈尔滨工业大学机电工程学院;
【基金】：国家自然科学基金(50805039) 河南省教育厅重点科研项目(17A460009)~~
【分类号】：TG580.692

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