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含B高导电Al-Si合金显微组织的观察与分析

发布时间:2018-08-06 17:07
【摘要】:通过电导率测量、金相观察、扫描电镜分析、透射电镜分析、X射线衍射分析和电子探针微量分析,研究了B的添加对铸造Al-Si合金晶格常数、晶粒尺寸和导电性能的影响。研究结果表明:当B的质量分数低于0.02%时,Al基体内各杂质元素Ti、Cr、Mn、V均以硼化物的形式从Al基体内析出,Al基体内的晶格畸变程度明显降低,电导率提高了6.45%;当B的质量分数超过0.02%时,B与Ti作用形成TiB_2,TiB_2促进Al3Ti相的形成,TiB_2和Al_3Ti共同促进晶粒细化,晶界增多,电子散射几率增加,同时过量的B固溶在Al基体内,电导率下降了2.55%;当B的质量分数为0.02%时,在保证合金的抗拉强度不降低的同时,合金的电导率达到最好,为33.00%IACS。
[Abstract]:The effects of B addition on lattice constant, grain size and conductivity of cast Al-Si alloy were studied by means of conductivity measurement, metallographic observation, scanning electron microscope analysis, transmission electron microscope analysis, X-ray diffraction analysis and electron probe microanalysis. The results show that when the mass fraction of B is lower than 0.02, the lattice distortion of Al matrix precipitates from Al matrix in the form of boride. When the mass fraction of B is more than 0.02, TiB2TiB2 is formed to promote the formation of Al3Ti phase. TiB2 and Al_3Ti promote grain refinement, grain boundary increase, electron scattering probability increase, and excess B solution in Al matrix. When the mass fraction of B is 0.02, the electrical conductivity of the alloy reaches the best when the tensile strength of the alloy is not reduced, and the conductivity of the alloy is 33.00.
【作者单位】: 中国兵器科学研究院宁波分院;中南大学;
【基金】:基金项目:宁波市创新团队(2014B82001)
【分类号】:TG146.21

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本文编号:2168390


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